A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage

Jongseok Kim, Sangwook Kwon, Heemoon Jeong, Youngtack Hong, Sanghun Lee, Insang Song, Byeong Kwon Ju

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

RF MEMS switches can be divided into electrostatic, magnetic, thermal, and piezoelectric types by their actuation mechanisms. Most research has focused on the electrostatic actuation types because of these types low power consumption, simple fabrication method, and good RF characteristics. However, these types of switches operate at high voltages compared with the other types. One of the main problems that affect the operation voltages is the bending of the membrane due to an internal stress gradient. To solve this problem, a thick and stiff membrane operated RF MEMS switch has been developed and is presented in this paper. This membrane consists of a flexible spring for an up-down actuation mode at low voltage and a pivot under the membrane for a seesaw mode on-off switch operation. This novel RF MEMS switch has been fabricated, and its RF characteristics measured. The minimum actuation voltage is approximately 10-12 V, the isolation approximately -50 dB, and the insertion loss is approximately -0.25 dB at 2 GHz, respectively.The bending range of the membrane has been measured by using an optical 3D profiler and the height is within 0.2 μm across the 800 μm length membrane. This bending range is uniform across all samples of an entire 4 in. wafer.

Original languageEnglish
Pages (from-to)114-119
Number of pages6
JournalSensors and Actuators, A: Physical
Volume153
Issue number1
DOIs
Publication statusPublished - 2009 Jun 25

Fingerprint

actuation
microelectromechanical systems
MEMS
switches
direct current
Switches
membranes
Membranes
Electric potential
electric potential
Electrostatics
electrostatics
pivots
Insertion losses
insertion loss
low voltage
residual stress
high voltages
Residual stresses
isolation

Keywords

  • RF switch
  • Stiff membrane
  • Variable seesaw

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Instrumentation

Cite this

A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage. / Kim, Jongseok; Kwon, Sangwook; Jeong, Heemoon; Hong, Youngtack; Lee, Sanghun; Song, Insang; Ju, Byeong Kwon.

In: Sensors and Actuators, A: Physical, Vol. 153, No. 1, 25.06.2009, p. 114-119.

Research output: Contribution to journalArticle

Kim, Jongseok ; Kwon, Sangwook ; Jeong, Heemoon ; Hong, Youngtack ; Lee, Sanghun ; Song, Insang ; Ju, Byeong Kwon. / A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage. In: Sensors and Actuators, A: Physical. 2009 ; Vol. 153, No. 1. pp. 114-119.
@article{e6a3776c6aa047189490ecdb36a286e4,
title = "A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage",
abstract = "RF MEMS switches can be divided into electrostatic, magnetic, thermal, and piezoelectric types by their actuation mechanisms. Most research has focused on the electrostatic actuation types because of these types low power consumption, simple fabrication method, and good RF characteristics. However, these types of switches operate at high voltages compared with the other types. One of the main problems that affect the operation voltages is the bending of the membrane due to an internal stress gradient. To solve this problem, a thick and stiff membrane operated RF MEMS switch has been developed and is presented in this paper. This membrane consists of a flexible spring for an up-down actuation mode at low voltage and a pivot under the membrane for a seesaw mode on-off switch operation. This novel RF MEMS switch has been fabricated, and its RF characteristics measured. The minimum actuation voltage is approximately 10-12 V, the isolation approximately -50 dB, and the insertion loss is approximately -0.25 dB at 2 GHz, respectively.The bending range of the membrane has been measured by using an optical 3D profiler and the height is within 0.2 μm across the 800 μm length membrane. This bending range is uniform across all samples of an entire 4 in. wafer.",
keywords = "RF switch, Stiff membrane, Variable seesaw",
author = "Jongseok Kim and Sangwook Kwon and Heemoon Jeong and Youngtack Hong and Sanghun Lee and Insang Song and Ju, {Byeong Kwon}",
year = "2009",
month = "6",
day = "25",
doi = "10.1016/j.sna.2009.04.002",
language = "English",
volume = "153",
pages = "114--119",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage

AU - Kim, Jongseok

AU - Kwon, Sangwook

AU - Jeong, Heemoon

AU - Hong, Youngtack

AU - Lee, Sanghun

AU - Song, Insang

AU - Ju, Byeong Kwon

PY - 2009/6/25

Y1 - 2009/6/25

N2 - RF MEMS switches can be divided into electrostatic, magnetic, thermal, and piezoelectric types by their actuation mechanisms. Most research has focused on the electrostatic actuation types because of these types low power consumption, simple fabrication method, and good RF characteristics. However, these types of switches operate at high voltages compared with the other types. One of the main problems that affect the operation voltages is the bending of the membrane due to an internal stress gradient. To solve this problem, a thick and stiff membrane operated RF MEMS switch has been developed and is presented in this paper. This membrane consists of a flexible spring for an up-down actuation mode at low voltage and a pivot under the membrane for a seesaw mode on-off switch operation. This novel RF MEMS switch has been fabricated, and its RF characteristics measured. The minimum actuation voltage is approximately 10-12 V, the isolation approximately -50 dB, and the insertion loss is approximately -0.25 dB at 2 GHz, respectively.The bending range of the membrane has been measured by using an optical 3D profiler and the height is within 0.2 μm across the 800 μm length membrane. This bending range is uniform across all samples of an entire 4 in. wafer.

AB - RF MEMS switches can be divided into electrostatic, magnetic, thermal, and piezoelectric types by their actuation mechanisms. Most research has focused on the electrostatic actuation types because of these types low power consumption, simple fabrication method, and good RF characteristics. However, these types of switches operate at high voltages compared with the other types. One of the main problems that affect the operation voltages is the bending of the membrane due to an internal stress gradient. To solve this problem, a thick and stiff membrane operated RF MEMS switch has been developed and is presented in this paper. This membrane consists of a flexible spring for an up-down actuation mode at low voltage and a pivot under the membrane for a seesaw mode on-off switch operation. This novel RF MEMS switch has been fabricated, and its RF characteristics measured. The minimum actuation voltage is approximately 10-12 V, the isolation approximately -50 dB, and the insertion loss is approximately -0.25 dB at 2 GHz, respectively.The bending range of the membrane has been measured by using an optical 3D profiler and the height is within 0.2 μm across the 800 μm length membrane. This bending range is uniform across all samples of an entire 4 in. wafer.

KW - RF switch

KW - Stiff membrane

KW - Variable seesaw

UR - http://www.scopus.com/inward/record.url?scp=67349259299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349259299&partnerID=8YFLogxK

U2 - 10.1016/j.sna.2009.04.002

DO - 10.1016/j.sna.2009.04.002

M3 - Article

VL - 153

SP - 114

EP - 119

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 1

ER -