A strategy to boost external quantum efficiency of organic light-emitting transistors

Seong Yong Cho, Seiyong Kim, Sohee Jeon, Rino Choi, Jeong Hwan Lee

Research output: Contribution to journalArticle

Abstract

Organic light-emitting transistors (OLETs) have emerged as promising light-emitting electronics, combining the functions of a transistor and a diode in a single device. OLETs typically possess outstanding electrical properties but have inefficient optical properties. Here, based on optical simulations, a strategy of how to improve the light output as well as reduce optical energy losses in OLETs is performed. The results reveal that the main optical energy losses occur via the waveguide mode by the organic layers and through absorption by the gate material. These energy losses in OLETs can be significantly reduced by appropriately adjusting the thicknesses and refractive indices of the transporting layers as well as those of the gate materials. This device design opens perspectives in the development of the efficiency of OLETs as high as 40% of external quantum efficiency.

Original languageEnglish
Article number043301
JournalApplied Physics Letters
Volume115
Issue number4
DOIs
Publication statusPublished - 2019 Jul 22
Externally publishedYes

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acceleration (physics)
quantum efficiency
transistors
energy dissipation
adjusting
diodes
electrical properties
refractivity
waveguides
optical properties
output
electronics
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A strategy to boost external quantum efficiency of organic light-emitting transistors. / Cho, Seong Yong; Kim, Seiyong; Jeon, Sohee; Choi, Rino; Lee, Jeong Hwan.

In: Applied Physics Letters, Vol. 115, No. 4, 043301, 22.07.2019.

Research output: Contribution to journalArticle

Cho, Seong Yong ; Kim, Seiyong ; Jeon, Sohee ; Choi, Rino ; Lee, Jeong Hwan. / A strategy to boost external quantum efficiency of organic light-emitting transistors. In: Applied Physics Letters. 2019 ; Vol. 115, No. 4.
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