A structural and compositional analysis of a TiOx diffusion barrier for indium Tin Oxide/Si contacts

Young Woo Ok, Won Kyu Park, Hyun Mi Kim, Ki Bum Kim, Donghwan Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the structural and compositional changes of titanium oxides as a diffusion barrier between indium tin oxide (ITO) and Si under two different Ti oxidation conditions: (1) annealing of the Ti layer deposited on Si in air followed by ITO deposition (Type I) and (2) annealing in nitrogen after the deposition of ITO/Ti on Si (Type II). The diffusion barrier layer in both samples, namely the Ti layer oxidized under different conditions, consisted of two regions: a region composed of a mixture of suicide and titanium oxide near the Si substrate and a titanium oxide region near the ITO layer. However, the titanium oxide in the Type I samples was composed of TiO2 and Ti 2O3 phases, whereas Ti2O3 was dominant in the Type II samples. In addition, the Type I and II samples showed the formation of voids in the middle of the barrier layer and in the region near the ITO layer, respectively. Therefore, the electrical and optical properties of ITO/ TiOx/Si are dependent on the structural and compositional changes of the diffusion barrier layer.

Original languageEnglish
Pages (from-to)481-485
Number of pages5
JournalMetals and Materials International
Volume14
Issue number4
DOIs
Publication statusPublished - 2008 Aug 1

Fingerprint

Diffusion barriers
Tin oxides
structural analysis
indium oxides
Indium
tin oxides
Titanium oxides
titanium oxides
barrier layers
Annealing
annealing
indium tin oxide
voids
Electric properties
Nitrogen
Optical properties
electrical properties
optical properties
nitrogen
Oxidation

Keywords

  • Diffusion barrier
  • Interfacial reaction
  • ITO/Si reaction
  • Ti oxide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

A structural and compositional analysis of a TiOx diffusion barrier for indium Tin Oxide/Si contacts. / Ok, Young Woo; Park, Won Kyu; Kim, Hyun Mi; Kim, Ki Bum; Kim, Donghwan.

In: Metals and Materials International, Vol. 14, No. 4, 01.08.2008, p. 481-485.

Research output: Contribution to journalArticle

Ok, Young Woo ; Park, Won Kyu ; Kim, Hyun Mi ; Kim, Ki Bum ; Kim, Donghwan. / A structural and compositional analysis of a TiOx diffusion barrier for indium Tin Oxide/Si contacts. In: Metals and Materials International. 2008 ; Vol. 14, No. 4. pp. 481-485.
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AU - Kim, Donghwan

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AB - We investigated the structural and compositional changes of titanium oxides as a diffusion barrier between indium tin oxide (ITO) and Si under two different Ti oxidation conditions: (1) annealing of the Ti layer deposited on Si in air followed by ITO deposition (Type I) and (2) annealing in nitrogen after the deposition of ITO/Ti on Si (Type II). The diffusion barrier layer in both samples, namely the Ti layer oxidized under different conditions, consisted of two regions: a region composed of a mixture of suicide and titanium oxide near the Si substrate and a titanium oxide region near the ITO layer. However, the titanium oxide in the Type I samples was composed of TiO2 and Ti 2O3 phases, whereas Ti2O3 was dominant in the Type II samples. In addition, the Type I and II samples showed the formation of voids in the middle of the barrier layer and in the region near the ITO layer, respectively. Therefore, the electrical and optical properties of ITO/ TiOx/Si are dependent on the structural and compositional changes of the diffusion barrier layer.

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