A study of Cu metallization for crystalline Si solar cells

Jae Sung You; Jinmo Kang; Donghwan Kim; James Jungho Pak; Choon Sik Kang

A study of Cu metallization for crystalline Si solar cells

Jae Sung You, Jinmo Kang, Donghwan Kim, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and I_sc, which correlates with R_s of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased R_s.

Original language	English
Pages (from-to)	277-280
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 2002 May 19 → 2002 May 24

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "A study of Cu metallization for crystalline Si solar cells",

abstract = "Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and Isc, which correlates with Rs of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased Rs.",

author = "You, {Jae Sung} and Jinmo Kang and Donghwan Kim and Pak, {James Jungho} and Kang, {Choon Sik}",

year = "2002",

language = "English",

pages = "277--280",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - A study of Cu metallization for crystalline Si solar cells

AU - You, Jae Sung

AU - Kang, Jinmo

AU - Kim, Donghwan

AU - Pak, James Jungho

AU - Kang, Choon Sik

PY - 2002

Y1 - 2002

N2 - Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and Isc, which correlates with Rs of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased Rs.

AB - Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and Isc, which correlates with Rs of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased Rs.

UR - http://www.scopus.com/inward/record.url?scp=0036948549&partnerID=8YFLogxK

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M3 - Conference article

AN - SCOPUS:0036948549

SN - 0160-8371

SP - 277

EP - 280

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

A study of Cu metallization for crystalline Si solar cells

Abstract

ASJC Scopus subject areas

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