A study of Cu metallization for crystalline Si solar cells

JaeSung S. You, Jinmo Kang, Donghwan Kim, James Jungho Pak, Choon Sik Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and I sc, which correlates with R s of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased R s.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages277-280
Number of pages4
Publication statusPublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

Other

Other29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period02/5/1902/5/24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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  • Cite this

    You, J. S., Kang, J., Kim, D., Pak, J. J., & Kang, C. S. (2002). A study of Cu metallization for crystalline Si solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 277-280)