A study of Cu metallization for crystalline Si solar cells

Jae Sung You, Jinmo Kang, Donghwan Kim, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and Isc, which correlates with Rs of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased Rs.

Original languageEnglish
Pages (from-to)277-280
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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