TY - GEN
T1 - A study of post annealing effects in the repair of high resistance failures with unstable Schottky barrier height in 4H-SiC Schottky barrier diode
AU - Kyoung, Sin Su
AU - Jung, Eun Sik
AU - Kang, Tai Young
AU - Yang, Chang Heon
AU - Sung, Man Young
N1 - Publisher Copyright:
© (2015) Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2015
Y1 - 2015
N2 - To improve the high resistance and low Breakdown Voltage (BV) of 4H-SiC SBD, the metal annealing process is usually used to to stabilize SBH. We confirmed that post metal annealing after the chip process also stabilizes SBH by the post annealing experiment of applying failure chips (4H-SiC Ti/Al SBD) that have a forward current (IF) under 1 [A] with high resistance, because of the metal annealing process error. The result of experiments showed that the IF increment and BV decrement are proportional to the applied temperatures over 450 °C, and the second additional post annealing shows a decrease of IF and BV. Aluminum and Titanium transformation with post metal annealing made a decrease of SBH, so that the on-resistance is decreased and BV is decreased (in severe cases, the intense post annealing generates Aluminum spiking). From a result of this work, using a suitable post metal annealing, we can improve the IF of SiC SBD with a high resistance failure from the metal process event.
AB - To improve the high resistance and low Breakdown Voltage (BV) of 4H-SiC SBD, the metal annealing process is usually used to to stabilize SBH. We confirmed that post metal annealing after the chip process also stabilizes SBH by the post annealing experiment of applying failure chips (4H-SiC Ti/Al SBD) that have a forward current (IF) under 1 [A] with high resistance, because of the metal annealing process error. The result of experiments showed that the IF increment and BV decrement are proportional to the applied temperatures over 450 °C, and the second additional post annealing shows a decrease of IF and BV. Aluminum and Titanium transformation with post metal annealing made a decrease of SBH, so that the on-resistance is decreased and BV is decreased (in severe cases, the intense post annealing generates Aluminum spiking). From a result of this work, using a suitable post metal annealing, we can improve the IF of SiC SBD with a high resistance failure from the metal process event.
KW - 4H-SiC Schottky Barrier Diode
KW - Post annealing
KW - Schottky barrier height
KW - Transformation
UR - http://www.scopus.com/inward/record.url?scp=84950336578&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950336578&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.821-823.588
DO - 10.4028/www.scientific.net/MSF.821-823.588
M3 - Conference contribution
AN - SCOPUS:84950336578
SN - 9783038354789
T3 - Materials Science Forum
SP - 588
EP - 591
BT - Silicon Carbide and Related Materials 2014
A2 - Chaussende, Didier
A2 - Ferro, Gabriel
PB - Trans Tech Publications Ltd
T2 - European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Y2 - 21 September 2014 through 25 September 2014
ER -