A study of post annealing effects in the repair of high resistance failures with unstable Schottky barrier height in 4H-SiC Schottky barrier diode

Sin Su Kyoung, Eun Sik Jung, Tai Young Kang, Chang Heon Yang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

To improve the high resistance and low Breakdown Voltage (BV) of 4H-SiC SBD, the metal annealing process is usually used to to stabilize SBH. We confirmed that post metal annealing after the chip process also stabilizes SBH by the post annealing experiment of applying failure chips (4H-SiC Ti/Al SBD) that have a forward current (IF) under 1 [A] with high resistance, because of the metal annealing process error. The result of experiments showed that the IF increment and BV decrement are proportional to the applied temperatures over 450 °C, and the second additional post annealing shows a decrease of IF and BV. Aluminum and Titanium transformation with post metal annealing made a decrease of SBH, so that the on-resistance is decreased and BV is decreased (in severe cases, the intense post annealing generates Aluminum spiking). From a result of this work, using a suitable post metal annealing, we can improve the IF of SiC SBD with a high resistance failure from the metal process event.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages588-591
Number of pages4
Volume821-823
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 2014 Sep 212014 Sep 25

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)02555476

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

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Keywords

  • 4H-SiC Schottky Barrier Diode
  • Post annealing
  • Schottky barrier height
  • Transformation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kyoung, S. S., Jung, E. S., Kang, T. Y., Yang, C. H., & Sung, M. Y. (2015). A study of post annealing effects in the repair of high resistance failures with unstable Schottky barrier height in 4H-SiC Schottky barrier diode. In Materials Science Forum (Vol. 821-823, pp. 588-591). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.588