Abstract
We have clarified that mechanical stress combined with shallower junction at the active edge is the main cause of junction leakage current failure of shallow p+/n salicided junctions for sub-0.15-μm CMOS technology, especially those with narrow active width. Mechanical stress results in the penetration of a Self-Aligned siLICIDE (SALICIDE) layer at the corner region of narrow active line. Moreover, a novel electrochemical etching with TEM shows shallower junctions at the active edge due to the bending up of the junction profile. We found that the application of a shallow trench isolation (STI), top corner rounding (TCR) process suppresses the mechanical stress of STI's top corner and thus eliminates the stress-induced p+/n salicided junction leakage failure. Furthermore, we optimized the Co SALICIDE process using a Ge+ pre-amorphization in narrow p+/n salicided junction.
Original language | English |
---|---|
Pages (from-to) | 1985-1992 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 49 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2002 Nov |
Externally published | Yes |
Keywords
- 2-D junction profile
- Atomic force microscopy (AFM)
- Ge pre-amorphization implant (PAI)
- P/n salicided junction
- SALICIDE penetration
- Stress-induced leakage failure
- Top corner rounding (TCR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering