CeO2 has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with ReBa2Cu307-δ(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of CeO2, layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited CeO2layer, when thickness of CeO2 layer exceeds 100 nm on the biaxially textured NL3%W substrate. The deposition rate has been limited to be less than 6 A/sec in order to get a good epitaxy. In this research, we deposited CeO2 single buffer layers on biaxially textured Ni-3%W substrate with 2step process such as thin nucleation layer(>10 nm) with low deposition rate(3 Å/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 Å/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial CeO2 layer with good texture without crack was obtained at 600 °C, which has Δφ A<j) value of 6.2 °, Δω value of 4.3 and average surface roughness(Ra) of 7.2 nm within 10 μm × 10 μm area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single CeO2 layer for low cost coated conductor.
|Number of pages||5|
|Journal||Journal of the Korea Institute of Applied Superconductivity and Cryogenics|
|Publication status||Published - 2011 Mar|
- 2-step process
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering