A study on CeO2 buffer layer on biaxially textured Ni-3%w substrate deposited by electron beam evaporation with high deposition rate

H. J. Kim, J. B. Lee, B. J. Kim, S. K. Hong, H. J. Lee, B. G. Kwon, H. G. Lee, G. W. Hong

Research output: Contribution to journalArticle

Abstract

CeO2 has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with ReBa2Cu307-δ(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of CeO2, layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited CeO2layer, when thickness of CeO2 layer exceeds 100 nm on the biaxially textured NL3%W substrate. The deposition rate has been limited to be less than 6 A/sec in order to get a good epitaxy. In this research, we deposited CeO2 single buffer layers on biaxially textured Ni-3%W substrate with 2step process such as thin nucleation layer(>10 nm) with low deposition rate(3 Å/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 Å/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial CeO2 layer with good texture without crack was obtained at 600 °C, which has Δφ A2 layer for low cost coated conductor.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of the Korea Institute of Applied Superconductivity and Cryogenics
Volume13
Issue number1
Publication statusPublished - 2011 Mar

Keywords

  • 2-step process
  • CeO single buffer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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