A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance

Eun Sik Jung, Yu Seup Cho, Ey Goo Kang, Yong Tae Kim, Man Young Sung

Research output: Contribution to journalArticle

Abstract

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

Original languageEnglish
Pages (from-to)601-605
Number of pages5
JournalJournal of Electrical Engineering and Technology
Volume7
Issue number4
DOIs
Publication statusPublished - 2012 Jul 1

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Insulated gate bipolar transistors (IGBT)
Electric breakdown
Voltage drop

Keywords

  • Breakdown voltage
  • Floating island
  • IGBTS
  • On-resistance
  • Power device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance. / Jung, Eun Sik; Cho, Yu Seup; Kang, Ey Goo; Kim, Yong Tae; Sung, Man Young.

In: Journal of Electrical Engineering and Technology, Vol. 7, No. 4, 01.07.2012, p. 601-605.

Research output: Contribution to journalArticle

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