A study on the effect of structure and P-doping of Si thin film as an anode for lithium rechargeable batteries

Jin O. Song, Heung Taek Shim, Dong Jin Byun, Joong Kee Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Effects of substrate temperature and phosphor doping on electrochemical characteristics of the silicon film anode were investigated. The silicon thin films were synthesized directly on copper foil by radio-frequency capacitively coupled plasma-enhanced chemical-vapor deposition (r.f.-CVD). The cyclability of the silicon anode greatly depends on the surface morphology and surface resistivity. The silicon film anodes which have granular structure and high conductivity showed higher cyclabilty than those of planer and low conductivity, respectively.

Original languageEnglish
Title of host publicationDiffusion and Defect Data Pt.B: Solid State Phenomena
Pages1063-1066
Number of pages4
Volume124-126
EditionPART 2
Publication statusPublished - 2007 Dec 1
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 2006 Sep 102006 Sep 14

Publication series

NameDiffusion and Defect Data Pt.B: Solid State Phenomena
NumberPART 2
Volume124-126
ISSN (Print)10120394

Other

OtherIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
CountryKorea, Republic of
CityJeju
Period06/9/1006/9/14

Keywords

  • Anode
  • CVD
  • Lithium rechargeable battery
  • PH
  • Silicon thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Song, J. O., Shim, H. T., Byun, D. J., & Lee, J. K. (2007). A study on the effect of structure and P-doping of Si thin film as an anode for lithium rechargeable batteries. In Diffusion and Defect Data Pt.B: Solid State Phenomena (PART 2 ed., Vol. 124-126, pp. 1063-1066). (Diffusion and Defect Data Pt.B: Solid State Phenomena; Vol. 124-126, No. PART 2).