A study on the mechanism of the hole density depletion in p-type cadmium telluride during heat treatment

Donghwan Kim, Alan L. Fahrenbruch, Richard H. Bube

Research output: Contribution to journalArticle

Abstract

The phonomenon of hole density decrease in p-type cadmium telluride (CdTe) after annealing was investigated in order to identify the responsible mechanism. A model is suggested for the mechanism. By successive etching and capacitance-voltage (C-V) profiling, we proved that the effect was a reality and not an artifact of C-V measurements. It was shown that the hole density decrease was related with evaporation of CdTe at the surface but not with the out-diffusion of the dopant impurity. Annealing under various cadmium vapor pressures showed results which indicate that the dopant impurity taking cadmium sites are responsible for the carrier loss. The suggested mechanism was confirmed by annealing cesium-doped CdTe which showed increase in hole density. The depletion of surface hole density was reversed when further evaporation of CdTe at the surface was suppressed.

Original languageEnglish
Pages (from-to)109-119
Number of pages11
JournalMetals and Materials International
Volume2
Issue number2
Publication statusPublished - 1996 Dec 1

Fingerprint

Cadmium telluride
cadmium tellurides
depletion
heat treatment
Heat treatment
Annealing
Cadmium
cadmium
annealing
Evaporation
capacitance
Doping (additives)
evaporation
Impurities
impurities
Cesium
Capacitance measurement
Voltage measurement
Vapor pressure
cesium

ASJC Scopus subject areas

  • Engineering(all)
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Condensed Matter Physics

Cite this

A study on the mechanism of the hole density depletion in p-type cadmium telluride during heat treatment. / Kim, Donghwan; Fahrenbruch, Alan L.; Bube, Richard H.

In: Metals and Materials International, Vol. 2, No. 2, 01.12.1996, p. 109-119.

Research output: Contribution to journalArticle

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