TY - GEN
T1 - A study on the optoelectronic properties of CuInL1-xGa xSe2 grain boundaries by electrostatic force microscopy
AU - Kang, Yoonmook
AU - Yun, Jae Ho
AU - Yoon, Kyung Hoon
AU - Jeon, K. S.
AU - Suh, Yung Doug
AU - Kim, Donghwan
PY - 2006
Y1 - 2006
N2 - We investigated the electric charge distribution in CuIn 1-xGaxSe2 films, with particular emphasis on grain boundaries. Hall measurements, electron beaminduced current and optical beam-induced current measurements are commonly used for the characterization of solar cells, but they do not provide the resolution necessary for the investigation of individual grain boundaries. Therefore, we used an electrostatic force microscopy (EFM) capable of probing the electric charge distribution and the potential gradient of sample surface. EFM experiments were performed at 300K with a Dimension ™ 3100 scanning probe microscope (Digital Instruments). We suggest that grain boundaries should be electron-accumulated area and the inner grain area be the hole-accumulated area. The potential variations between the grain boundaries and inner grain area were estimated to be 60-180meV.
AB - We investigated the electric charge distribution in CuIn 1-xGaxSe2 films, with particular emphasis on grain boundaries. Hall measurements, electron beaminduced current and optical beam-induced current measurements are commonly used for the characterization of solar cells, but they do not provide the resolution necessary for the investigation of individual grain boundaries. Therefore, we used an electrostatic force microscopy (EFM) capable of probing the electric charge distribution and the potential gradient of sample surface. EFM experiments were performed at 300K with a Dimension ™ 3100 scanning probe microscope (Digital Instruments). We suggest that grain boundaries should be electron-accumulated area and the inner grain area be the hole-accumulated area. The potential variations between the grain boundaries and inner grain area were estimated to be 60-180meV.
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U2 - 10.1109/WCPEC.2006.279505
DO - 10.1109/WCPEC.2006.279505
M3 - Conference contribution
AN - SCOPUS:41749116859
SN - 1424400163
SN - 9781424400164
T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
SP - 516
EP - 518
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Y2 - 7 May 2006 through 12 May 2006
ER -