A study on the optoelectronic properties of CuInL1-xGa xSe2 grain boundaries by electrostatic force microscopy

Yoonmook Kang; Jae Ho Yun; Kyung Hoon Yoon; K. S. Jeon; Yung Doug Suh; Donghwan Kim

doi:10.1109/WCPEC.2006.279505

A study on the optoelectronic properties of CuInL_1-xGa _xSe₂ grain boundaries by electrostatic force microscopy

Yoonmook Kang, Jae Ho Yun, Kyung Hoon Yoon, K. S. Jeon, Yung Doug Suh, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the electric charge distribution in CuIn _1-xGa_xSe₂ films, with particular emphasis on grain boundaries. Hall measurements, electron beaminduced current and optical beam-induced current measurements are commonly used for the characterization of solar cells, but they do not provide the resolution necessary for the investigation of individual grain boundaries. Therefore, we used an electrostatic force microscopy (EFM) capable of probing the electric charge distribution and the potential gradient of sample surface. EFM experiments were performed at 300K with a Dimension ™ 3100 scanning probe microscope (Digital Instruments). We suggest that grain boundaries should be electron-accumulated area and the inner grain area be the hole-accumulated area. The potential variations between the grain boundaries and inner grain area were estimated to be 60-180meV.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	516-518
Number of pages	3
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279505
Publication status	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/WCPEC.2006.279505

Cite this

Kang, Y., Yun, J. H., Yoon, K. H., Jeon, K. S., Suh, Y. D., & Kim, D. (2006). A study on the optoelectronic properties of CuInL_1-xGa _xSe₂ grain boundaries by electrostatic force microscopy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 516-518). [4059678] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279505

A study on the optoelectronic properties of CuInL_1-xGa _xSe₂ grain boundaries by electrostatic force microscopy. / Kang, Yoonmook; Yun, Jae Ho; Yoon, Kyung Hoon et al.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 516-518 4059678 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kang, Y, Yun, JH, Yoon, KH, Jeon, KS, Suh, YD & Kim, D 2006, A study on the optoelectronic properties of CuInL_1-xGa _xSe₂ grain boundaries by electrostatic force microscopy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059678, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 516-518, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279505

Kang Y, Yun JH, Yoon KH, Jeon KS, Suh YD, Kim D. A study on the optoelectronic properties of CuInL_1-xGa _xSe₂ grain boundaries by electrostatic force microscopy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 516-518. 4059678. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279505

Kang, Yoonmook ; Yun, Jae Ho ; Yoon, Kyung Hoon et al. / A study on the optoelectronic properties of CuInL_1-xGa _xSe₂ grain boundaries by electrostatic force microscopy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 516-518 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

@inproceedings{00bfdd57555d4c7a9fe1c8bf288c7fe3,

title = "A study on the optoelectronic properties of CuInL1-xGa xSe2 grain boundaries by electrostatic force microscopy",

abstract = "We investigated the electric charge distribution in CuIn 1-xGaxSe2 films, with particular emphasis on grain boundaries. Hall measurements, electron beaminduced current and optical beam-induced current measurements are commonly used for the characterization of solar cells, but they do not provide the resolution necessary for the investigation of individual grain boundaries. Therefore, we used an electrostatic force microscopy (EFM) capable of probing the electric charge distribution and the potential gradient of sample surface. EFM experiments were performed at 300K with a Dimension {\texttrademark} 3100 scanning probe microscope (Digital Instruments). We suggest that grain boundaries should be electron-accumulated area and the inner grain area be the hole-accumulated area. The potential variations between the grain boundaries and inner grain area were estimated to be 60-180meV.",

author = "Yoonmook Kang and Yun, {Jae Ho} and Yoon, {Kyung Hoon} and Jeon, {K. S.} and Suh, {Yung Doug} and Donghwan Kim",

year = "2006",

doi = "10.1109/WCPEC.2006.279505",

language = "English",

isbn = "1424400163",

series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

publisher = "IEEE Computer Society",

pages = "516--518",

booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

TY - GEN

T1 - A study on the optoelectronic properties of CuInL1-xGa xSe2 grain boundaries by electrostatic force microscopy

AU - Kang, Yoonmook

AU - Yun, Jae Ho

AU - Yoon, Kyung Hoon

AU - Jeon, K. S.

AU - Suh, Yung Doug

AU - Kim, Donghwan

PY - 2006

Y1 - 2006

N2 - We investigated the electric charge distribution in CuIn 1-xGaxSe2 films, with particular emphasis on grain boundaries. Hall measurements, electron beaminduced current and optical beam-induced current measurements are commonly used for the characterization of solar cells, but they do not provide the resolution necessary for the investigation of individual grain boundaries. Therefore, we used an electrostatic force microscopy (EFM) capable of probing the electric charge distribution and the potential gradient of sample surface. EFM experiments were performed at 300K with a Dimension ™ 3100 scanning probe microscope (Digital Instruments). We suggest that grain boundaries should be electron-accumulated area and the inner grain area be the hole-accumulated area. The potential variations between the grain boundaries and inner grain area were estimated to be 60-180meV.

AB - We investigated the electric charge distribution in CuIn 1-xGaxSe2 films, with particular emphasis on grain boundaries. Hall measurements, electron beaminduced current and optical beam-induced current measurements are commonly used for the characterization of solar cells, but they do not provide the resolution necessary for the investigation of individual grain boundaries. Therefore, we used an electrostatic force microscopy (EFM) capable of probing the electric charge distribution and the potential gradient of sample surface. EFM experiments were performed at 300K with a Dimension ™ 3100 scanning probe microscope (Digital Instruments). We suggest that grain boundaries should be electron-accumulated area and the inner grain area be the hole-accumulated area. The potential variations between the grain boundaries and inner grain area were estimated to be 60-180meV.

UR - http://www.scopus.com/inward/record.url?scp=41749116859&partnerID=8YFLogxK

U2 - 10.1109/WCPEC.2006.279505

DO - 10.1109/WCPEC.2006.279505

M3 - Conference contribution

AN - SCOPUS:41749116859

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 516

EP - 518

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

PB - IEEE Computer Society

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -