A sub 1V CMOS bandgap reference with two diodes

Hyung Jin Choi, Jeong Cho, Soo-Won Kim

Research output: Contribution to journalArticle

Abstract

A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

Original languageEnglish
Article number12004
JournalMATEC Web of Conferences
Volume54
DOIs
Publication statusPublished - 2016 Apr 22

Fingerprint

Diodes
Energy gap
Electric potential
Networks (circuits)
Temperature
Threshold voltage

ASJC Scopus subject areas

  • Chemistry(all)
  • Engineering(all)
  • Materials Science(all)

Cite this

A sub 1V CMOS bandgap reference with two diodes. / Choi, Hyung Jin; Cho, Jeong; Kim, Soo-Won.

In: MATEC Web of Conferences, Vol. 54, 12004, 22.04.2016.

Research output: Contribution to journalArticle

@article{dcb5fdec2c8b48be83b1ac073ee88b8c,
title = "A sub 1V CMOS bandgap reference with two diodes",
abstract = "A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08{\%}.",
author = "Choi, {Hyung Jin} and Jeong Cho and Soo-Won Kim",
year = "2016",
month = "4",
day = "22",
doi = "10.1051/matecconf/20165412004",
language = "English",
volume = "54",
journal = "MATEC Web of Conferences",
issn = "2261-236X",
publisher = "EDP Sciences",

}

TY - JOUR

T1 - A sub 1V CMOS bandgap reference with two diodes

AU - Choi, Hyung Jin

AU - Cho, Jeong

AU - Kim, Soo-Won

PY - 2016/4/22

Y1 - 2016/4/22

N2 - A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

AB - A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

UR - http://www.scopus.com/inward/record.url?scp=84992375344&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992375344&partnerID=8YFLogxK

U2 - 10.1051/matecconf/20165412004

DO - 10.1051/matecconf/20165412004

M3 - Article

AN - SCOPUS:84992375344

VL - 54

JO - MATEC Web of Conferences

JF - MATEC Web of Conferences

SN - 2261-236X

M1 - 12004

ER -