TY - JOUR
T1 - A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes
AU - Kim, Dae Hyun
AU - Park, Jae Seong
AU - Kang, Daesung
AU - Seong, Tae Yeon
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/3
Y1 - 2016/3
N2 - We have investigated the effect of a Ta diffusion barrier layer on the electrical characteristics of AuBe/Au contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). It was shown that after annealing at 500 C, the AuBe/Ta/Au contacts exhibited nearly 2 orders of magnitude lower specific contact resistance (2.8×106?cm2) than the AuBe/Au contacts (1.0×10%4?cm2). The LEDs with and without the Ta diffusion barrier layer showed an external quantum efficiency of 14.03 and 13.5% at 50 mA, respectively. After annealing at 500 C, the AuBe/Ta/Au contacts showed a higher reflectance (92.8% at 617 nm) than that of the AuBe/Au contacts (87.7%). X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au samples shifted to higher binDing energies, while this level shifted towards lower binDing energies for the AuBe/Ta/Au samples. Depth profiles using Auger electron spectroscopy (AES) showed that annealing of the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, while for the AuBe/Ta/Au samples, the outdiffusion of Be atoms was blocked by the Ta barrier layer and more Be atoms were indiffused into GaP. The annealing-induced electrical degradation and ohmic contact formation are described and discussed based on the XPS and electrical results.
AB - We have investigated the effect of a Ta diffusion barrier layer on the electrical characteristics of AuBe/Au contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). It was shown that after annealing at 500 C, the AuBe/Ta/Au contacts exhibited nearly 2 orders of magnitude lower specific contact resistance (2.8×106?cm2) than the AuBe/Au contacts (1.0×10%4?cm2). The LEDs with and without the Ta diffusion barrier layer showed an external quantum efficiency of 14.03 and 13.5% at 50 mA, respectively. After annealing at 500 C, the AuBe/Ta/Au contacts showed a higher reflectance (92.8% at 617 nm) than that of the AuBe/Au contacts (87.7%). X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au samples shifted to higher binDing energies, while this level shifted towards lower binDing energies for the AuBe/Ta/Au samples. Depth profiles using Auger electron spectroscopy (AES) showed that annealing of the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, while for the AuBe/Ta/Au samples, the outdiffusion of Be atoms was blocked by the Ta barrier layer and more Be atoms were indiffused into GaP. The annealing-induced electrical degradation and ohmic contact formation are described and discussed based on the XPS and electrical results.
UR - http://www.scopus.com/inward/record.url?scp=84962004132&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.032102
DO - 10.7567/JJAP.55.032102
M3 - Article
AN - SCOPUS:84962004132
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3
M1 - 032102
ER -