A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application

Jongseok Kim; Sangwook Kwon; Youngteak Hong; Insang Song; Byeongkwon Ju

doi:10.1116/1.2952461

A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application

Jongseok Kim, Sangwook Kwon, Youngteak Hong, Insang Song, Byeongkwon Ju

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors have developed a thermocompressive bonding method using a sputtered Au layer and applied it to the coplanar waveguide (CPW) package. The bonding temperature is 350 °C, the bonding pressure is 63 MPa, and the duration time is limited to 30 min. The bonding strength is evaluated using the Scotch tape and tweezers detaching method and the hermeticity is evaluated using helium leak detection work station. The measured hermeticity is 1.0× 10^-9 Pa m3 s. To measure the electrical properties, the CPW line is packaged and the rf characteristics and dc resistance are measured. The insertion loss of the packaged CPW line is -0.074 dB at 2 GHz and the dc resistance is from 0.019 to 0.046 Ω. This result shows that their Au compressive bonding method is very useful and good for microdevice wafer level packaging applications.

Original language	English
Pages (from-to)	1363-1367
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	4
DOIs	https://doi.org/10.1116/1.2952461
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application",

abstract = "The authors have developed a thermocompressive bonding method using a sputtered Au layer and applied it to the coplanar waveguide (CPW) package. The bonding temperature is 350 °C, the bonding pressure is 63 MPa, and the duration time is limited to 30 min. The bonding strength is evaluated using the Scotch tape and tweezers detaching method and the hermeticity is evaluated using helium leak detection work station. The measured hermeticity is 1.0× 10-9 Pa m3 s. To measure the electrical properties, the CPW line is packaged and the rf characteristics and dc resistance are measured. The insertion loss of the packaged CPW line is -0.074 dB at 2 GHz and the dc resistance is from 0.019 to 0.046 Ω. This result shows that their Au compressive bonding method is very useful and good for microdevice wafer level packaging applications.",

author = "Jongseok Kim and Sangwook Kwon and Youngteak Hong and Insang Song and Byeongkwon Ju",

note = "Funding Information: This project is conducted through the Practical Application Project of Advanced Microsystems Packaging Program of Seoul Technopark, funded by the Ministry of Knowledge Economy.",

year = "2008",

doi = "10.1116/1.2952461",

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T1 - A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application

AU - Kim, Jongseok

AU - Kwon, Sangwook

AU - Hong, Youngteak

AU - Song, Insang

AU - Ju, Byeongkwon

N1 - Funding Information: This project is conducted through the Practical Application Project of Advanced Microsystems Packaging Program of Seoul Technopark, funded by the Ministry of Knowledge Economy.

PY - 2008

Y1 - 2008

N2 - The authors have developed a thermocompressive bonding method using a sputtered Au layer and applied it to the coplanar waveguide (CPW) package. The bonding temperature is 350 °C, the bonding pressure is 63 MPa, and the duration time is limited to 30 min. The bonding strength is evaluated using the Scotch tape and tweezers detaching method and the hermeticity is evaluated using helium leak detection work station. The measured hermeticity is 1.0× 10-9 Pa m3 s. To measure the electrical properties, the CPW line is packaged and the rf characteristics and dc resistance are measured. The insertion loss of the packaged CPW line is -0.074 dB at 2 GHz and the dc resistance is from 0.019 to 0.046 Ω. This result shows that their Au compressive bonding method is very useful and good for microdevice wafer level packaging applications.

AB - The authors have developed a thermocompressive bonding method using a sputtered Au layer and applied it to the coplanar waveguide (CPW) package. The bonding temperature is 350 °C, the bonding pressure is 63 MPa, and the duration time is limited to 30 min. The bonding strength is evaluated using the Scotch tape and tweezers detaching method and the hermeticity is evaluated using helium leak detection work station. The measured hermeticity is 1.0× 10-9 Pa m3 s. To measure the electrical properties, the CPW line is packaged and the rf characteristics and dc resistance are measured. The insertion loss of the packaged CPW line is -0.074 dB at 2 GHz and the dc resistance is from 0.019 to 0.046 Ω. This result shows that their Au compressive bonding method is very useful and good for microdevice wafer level packaging applications.

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A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application

Abstract

ASJC Scopus subject areas

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