A thermodynamic model for the growth of buried oxide layers by thermal oxidation

E. Schroer, S. Hopfe, Joo Youl Huh, U. Gösele

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.

Original languageEnglish
Pages (from-to)237-240
Number of pages4
JournalMaterials Science and Engineering B
Volume36
Issue number1-3
Publication statusPublished - 1996 Jan 1
Externally publishedYes

Fingerprint

Silicon
Oxides
Supersaturation
supersaturation
Thermodynamics
Oxidation
thermodynamics
oxidation
oxides
silicon
Growth kinetics
interstitials
insulators
Oxygen
Hot Temperature
kinetics
oxygen

Keywords

  • Diffusion
  • Kinetics
  • Silicon
  • Thermodynamic

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Engineering(all)

Cite this

A thermodynamic model for the growth of buried oxide layers by thermal oxidation. / Schroer, E.; Hopfe, S.; Huh, Joo Youl; Gösele, U.

In: Materials Science and Engineering B, Vol. 36, No. 1-3, 01.01.1996, p. 237-240.

Research output: Contribution to journalArticle

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