A thermodynamic model for the growth of buried oxide layers by thermal oxidation

E. Schroer, S. Hopfe, J. Y. Huh, U. Gösele

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.

Original languageEnglish
Pages (from-to)237-240
Number of pages4
JournalMaterials Science and Engineering B
Volume36
Issue number1-3
DOIs
Publication statusPublished - 1996 Jan
Externally publishedYes

Keywords

  • Diffusion
  • Kinetics
  • Silicon
  • Thermodynamic

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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