A to-watt x-band grid oscillator

J. B. Hacker, M. P. De Lisio, Moonil Kim, Cheh Ming Liu, Sri Jie Li, S. W. Wedge, D. B. Rutledge

Research output: Chapter in Book/Report/Conference proceedingChapter


A 100.transistor MESFET grid oseillator haa been labricated that generates an effective radiated power of 660W at 9.8 GH. and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3W, or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 1.4V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the 55B noise-ta-carrier ratio Was measured and found to be essentially independent of the radiation angle. The average 5SB noise level Was -81 dBc/H. at an offset of 150 kH. from the carrier. An average improvement in the SSB noise-eo-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a l6.transutor grid.

Original languageEnglish
Title of host publicationActive Antennas and Quasi-Optical Arrays
PublisherJohn Wiley and Sons Inc.
Number of pages4
ISBN (Electronic)9780470544068
ISBN (Print)0780334868, 9780780334861
Publication statusPublished - 2009 Jan 1
Externally publishedYes


  • Computer architecture
  • Equivalent circuits
  • Injection-locked oscillators
  • Logic gates
  • Microprocessors
  • Mirrors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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