A transformer-matched millimeter-wave CMOS power amplifier

Seungwon Park, Sanggeun Jeon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

Original languageEnglish
Pages (from-to)687-694
Number of pages8
JournalJournal of Semiconductor Technology and Science
Volume16
Issue number5
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

Power amplifiers
Millimeter waves
Bandwidth
Differential amplifiers
Wave power

Keywords

  • CMOS
  • Millimeter-wave
  • Power amplifier
  • Transformer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

A transformer-matched millimeter-wave CMOS power amplifier. / Park, Seungwon; Jeon, Sanggeun.

In: Journal of Semiconductor Technology and Science, Vol. 16, No. 5, 01.10.2016, p. 687-694.

Research output: Contribution to journalArticle

@article{8d5e10411eaa474f989d6ebf58f6feeb,
title = "A transformer-matched millimeter-wave CMOS power amplifier",
abstract = "A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7{\%}, respectively at 50 GHz.",
keywords = "CMOS, Millimeter-wave, Power amplifier, Transformer",
author = "Seungwon Park and Sanggeun Jeon",
year = "2016",
month = "10",
day = "1",
doi = "10.5573/JSTS.2016.16.5.687",
language = "English",
volume = "16",
pages = "687--694",
journal = "Journal of Semiconductor Technology and Science",
issn = "1598-1657",
publisher = "Institute of Electronics Engineers of Korea",
number = "5",

}

TY - JOUR

T1 - A transformer-matched millimeter-wave CMOS power amplifier

AU - Park, Seungwon

AU - Jeon, Sanggeun

PY - 2016/10/1

Y1 - 2016/10/1

N2 - A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

AB - A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

KW - CMOS

KW - Millimeter-wave

KW - Power amplifier

KW - Transformer

UR - http://www.scopus.com/inward/record.url?scp=84994235720&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994235720&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2016.16.5.687

DO - 10.5573/JSTS.2016.16.5.687

M3 - Article

AN - SCOPUS:84994235720

VL - 16

SP - 687

EP - 694

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

SN - 1598-1657

IS - 5

ER -