A triple-push voltage controlled oscillator in 0.13-μm RFCMOS technology operating near 177 GHz

Namhyung Kim, Kyungmin Kim, Jae-Sung Rieh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper presents a G-band triple-push voltage controlled oscillator (VCO) operating around 177 GHz. The VCO, implemented in a commercial 0.13-ìm RFCMOS technology, adopts a triplepush topology that is composed of 3 symmetrically coupled identical Colpitts sub-oscillators. Oscillation frequency can be tuned from 175.9 GHz to 178.4 GHz with varactor tuning voltage swept from 0 to 1.2V. The calibrated output power ranged from -19.7 dBm to -16.6 dBm depending on the oscillation frequency. The measured phase noise of the VCO is .80.2 dBc/Hz at 1MHz offset. The results clearly demonstrate the possibility of applying triple-push topology for VCOs operating beyond 100 GHz, enabling various high frequency applications that require tunable frequency sources.

Original languageEnglish
Pages (from-to)444-447
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE97-C
Issue number5
DOIs
Publication statusPublished - 2014 Jan 1

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Variable frequency oscillators
Topology
Varactors
Phase noise
Tuning
Electric potential

Keywords

  • Phase noise
  • Triple-push
  • VCO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A triple-push voltage controlled oscillator in 0.13-μm RFCMOS technology operating near 177 GHz. / Kim, Namhyung; Kim, Kyungmin; Rieh, Jae-Sung.

In: IEICE Transactions on Electronics, Vol. E97-C, No. 5, 01.01.2014, p. 444-447.

Research output: Contribution to journalArticle

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