A wide band 215-255 GHz CB differential amplifier in a 0.25-μm SiGe HBT technology

Daekeun Yoon, Namhyung Kim, Ullich Pfeiffer, Bernd Heinemann, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A wideband amplifier operating beyond 200 GHz has been developed in a 0.25-μm SiGe HBT technology. The common-base (CB) amplifier consists of 5 differential stages and a pair of Marchand baluns to allow single-ended S-parameter measurement. The amplifier shows a flat gain over 215-255 GHz, leading to a 3-dB bandwidth of 40 GHz with a peak gain of 10 dB. It consumes a total DC power of 153 mW with a 1.5 V supply voltage. The fabricated chip occupies an area of 400 × 600 μm2 including pads and baluns.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages351-353
Number of pages3
DOIs
Publication statusPublished - 2013
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 2013 Nov 52013 Nov 8

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Other

Other2013 3rd Asia-Pacific Microwave Conference, APMC 2013
CountryKorea, Republic of
CitySeoul
Period13/11/513/11/8

Keywords

  • broadband amplifiers
  • heteroj unction bipolar transistors
  • monolithic microwave integrated circuit
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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