A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

Jae Hong Kwon, Jung Hoon Seo, Sang Il Shin, Byeong Kwon Ju

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Abstract

This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm2 V-1 s -1, an on/off ratio of >104, a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (V DS) is 20 V.

Original languageEnglish
Article number065105
JournalJournal of Physics D: Applied Physics
Volume42
Issue number6
DOIs
Publication statusPublished - 2009 Apr 8

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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