A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

Jae Hong Kwon, Jung Hoon Seo, Sang Il Shin, Byeong Kwon Ju

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm2 V-1 s -1, an on/off ratio of >104, a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (V DS) is 20 V.

Original languageEnglish
Article number065105
JournalJournal of Physics D: Applied Physics
Volume42
Issue number6
DOIs
Publication statusPublished - 2009 Apr 8

Fingerprint

Zinc Oxide
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
transistors
Siloxanes
Electrodes
electrodes
siloxanes
Opacity
thin films
Threshold voltage
threshold voltage
transmittance
Glass
glass
Electric potential
electric potential
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode. / Kwon, Jae Hong; Seo, Jung Hoon; Shin, Sang Il; Ju, Byeong Kwon.

In: Journal of Physics D: Applied Physics, Vol. 42, No. 6, 065105, 08.04.2009.

Research output: Contribution to journalArticle

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