Ab Initio study of the mixed dimer formation in Ge growth on Si(100)

Young Jo Ko, Kang Ho Park, Jeong Sook Ha, Wan Soo Yun

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We investigate the mechanism of mixed Ge-Si dimer formation in the growth of submonolayer Ge on Si(100) through first-principles total-energy calculations. Calculated surface energies show that the Ge-Si and Ge-Ge dimer growth modes are almost equally favorable. Displacive adsorption of individual Ge adatoms to form substitutional mixed Ge-Si dimers is found to need a large activation energy due to the generation of a Si dangling bond during the reaction. We propose a mechanism, in which two Ge-Si dimers result via an atomic exchange during adatom dimerization process. This exchange dimerization process requires an activation energy of 0.1 eV, and it is more favorable than the normal Ge-Ge dimerization process in consideration of both kinetics and energetics and, thus, may explain predominant mixed Ge-Si dimers observed at submonolayer coverages of Ge. Finally, we compare calculated atomic structures of mixed Ge-Si and pure Ge-Ge dimers on Si(100) with previous theoretical and experimental results.

Original languageEnglish
Pages (from-to)8158-8163
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number11
Publication statusPublished - 1999 Dec 1
Externally publishedYes

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Dimers
dimers
Dimerization
dimerization
Adatoms
adatoms
Activation energy
activation energy
Dangling bonds
Interfacial energy
atomic structure
surface energy
Adsorption
Kinetics
adsorption
kinetics
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ab Initio study of the mixed dimer formation in Ge growth on Si(100). / Ko, Young Jo; Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 11, 01.12.1999, p. 8158-8163.

Research output: Contribution to journalArticle

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