Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells

Young Woo Ok, Ajeet Rohatgi, Yeon Ho Kil, Sung Eun Park, Dong Hwan Kim, Joon Sung Lee, Chel Jong Choi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

Original languageEnglish
Article number5680936
Pages (from-to)351-353
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number3
DOIs
Publication statusPublished - 2011 Mar

Keywords

  • Junction
  • Si interstitial
  • selective chemical etching
  • solar cells
  • transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Ok, Y. W., Rohatgi, A., Kil, Y. H., Park, S. E., Kim, D. H., Lee, J. S., & Choi, C. J. (2011). Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells. IEEE Electron Device Letters, 32(3), 351-353. [5680936]. https://doi.org/10.1109/LED.2010.2098840