Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells

Young Woo Ok; Ajeet Rohatgi; Yeon Ho Kil; Sung Eun Park; Dong Hwan Kim; Joon Sung Lee; Chel Jong Choi

doi:10.1109/LED.2010.2098840

Abnormal dopant distribution in POCl₃-diffused N⁺ emitter of textured silicon solar cells

Young Woo Ok, Ajeet Rohatgi, Yeon Ho Kil, Sung Eun Park, Dong Hwan Kim, Joon Sung Lee, Chel Jong Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We investigated 2-D dopant distribution in a POCl₃ -diffused n⁺ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n⁺ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

Original language	English
Article number	5680936
Pages (from-to)	351-353
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2098840
Publication status	Published - 2011 Mar

Keywords

Junction
Si interstitial
selective chemical etching
solar cells
transmission electron microscopy (TEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2098840

Cite this

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title = "Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells",

abstract = "We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.",

keywords = "Junction, Si interstitial, selective chemical etching, solar cells, transmission electron microscopy (TEM)",

author = "Ok, {Young Woo} and Ajeet Rohatgi and Kil, {Yeon Ho} and Park, {Sung Eun} and Kim, {Dong Hwan} and Lee, {Joon Sung} and Choi, {Chel Jong}",

note = "Funding Information: Manuscript received November 3, 2010; revised November 29, 2010; accepted December 3, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported in part by the New and Renewable Energy R&D program (2008-N-PV08-P-09) under the Korean Ministry of Knowledge Economy and in part by the World Class University program (R31-20029) of the Korean Ministry of Education, Science and Technology. The review of this letter was arranged by Editor P. K.-L. Yu.",

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AU - Ok, Young Woo

AU - Rohatgi, Ajeet

AU - Kil, Yeon Ho

AU - Park, Sung Eun

AU - Kim, Dong Hwan

AU - Lee, Joon Sung

AU - Choi, Chel Jong

N1 - Funding Information: Manuscript received November 3, 2010; revised November 29, 2010; accepted December 3, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported in part by the New and Renewable Energy R&D program (2008-N-PV08-P-09) under the Korean Ministry of Knowledge Economy and in part by the World Class University program (R31-20029) of the Korean Ministry of Education, Science and Technology. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2011/3

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N2 - We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

AB - We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

KW - Junction

KW - Si interstitial

KW - selective chemical etching

KW - solar cells

KW - transmission electron microscopy (TEM)

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