The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.
- Leakage current
- Selective chemical etching
- Shallow trench isolation (STI)
- Transient enhanced diffusion (TED)
- Transmission electron microscopy (TEM)
ASJC Scopus subject areas
- Electrical and Electronic Engineering