Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism

Chel Jong Choi; Tae Yeon Seong; Key Min Lee; Joo Hyoung Lee; Young Jin Park; Hi Deok Lee

doi:10.1109/55.992834

Abnormal junction profile of silicided p⁺/n shallow junctions: A leakage mechanism

Chel Jong Choi, Tae Yeon Seong, Key Min Lee, Joo Hyoung Lee, Young Jin Park, Hi Deok Lee

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p⁺/n shallow junctions.

Original language	English
Pages (from-to)	188-190
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	4
DOIs	https://doi.org/10.1109/55.992834
Publication status	Published - 2002 Apr
Externally published	Yes

Keywords

Co-salicidation
Junction
Leakage current
Selective chemical etching
Shallow trench isolation (STI)
Transient enhanced diffusion (TED)
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.992834

Cite this

@article{36ab1aadc24e44f2bb341fa2a2b92a35,

title = "Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism",

abstract = "The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.",

keywords = "Co-salicidation, Junction, Leakage current, Selective chemical etching, Shallow trench isolation (STI), Transient enhanced diffusion (TED), Transmission electron microscopy (TEM)",

author = "Choi, {Chel Jong} and Seong, {Tae Yeon} and Lee, {Key Min} and Lee, {Joo Hyoung} and Park, {Young Jin} and Lee, {Hi Deok}",

note = "Funding Information: Manuscript received October 23, 2001; revised December 6, 2001. This work was supported by Korea Science and Engineering Foundation (KOSEF) under Contract 981-0802-020-2. The review of this letter was arranged by Editor T.-J. King. C.-J. Choi and T.-Y. Seong are with the Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea (e-mail: tyseong@kjist.ac.kr). K.-M. Lee, J.-H. Lee and Y.-J. Park are with the Memory Research and Development Division, Hynix Semiconductor, Inc., Cheongju 362-725, Korea. H.-D. Lee is with the Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea. Publisher Item Identifier S 0741-3106(02)03202-0.",

year = "2002",

month = apr,

doi = "10.1109/55.992834",

language = "English",

volume = "23",

pages = "188--190",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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TY - JOUR

T1 - Abnormal junction profile of silicided p+/n shallow junctions

T2 - A leakage mechanism

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Lee, Key Min

AU - Lee, Joo Hyoung

AU - Park, Young Jin

AU - Lee, Hi Deok

N1 - Funding Information: Manuscript received October 23, 2001; revised December 6, 2001. This work was supported by Korea Science and Engineering Foundation (KOSEF) under Contract 981-0802-020-2. The review of this letter was arranged by Editor T.-J. King. C.-J. Choi and T.-Y. Seong are with the Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea (e-mail: tyseong@kjist.ac.kr). K.-M. Lee, J.-H. Lee and Y.-J. Park are with the Memory Research and Development Division, Hynix Semiconductor, Inc., Cheongju 362-725, Korea. H.-D. Lee is with the Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea. Publisher Item Identifier S 0741-3106(02)03202-0.

PY - 2002/4

Y1 - 2002/4

N2 - The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.

AB - The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.

KW - Co-salicidation

KW - Junction

KW - Leakage current

KW - Selective chemical etching

KW - Shallow trench isolation (STI)

KW - Transient enhanced diffusion (TED)

KW - Transmission electron microscopy (TEM)

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