Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism

Chel Jong Choi, Tae Yeon Seong, Key Min Lee, Joo Hyoung Lee, Young Jin Park, Hi Deok Lee

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.

Original languageEnglish
Pages (from-to)188-190
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2002 Apr
Externally publishedYes


  • Co-salicidation
  • Junction
  • Leakage current
  • Selective chemical etching
  • Shallow trench isolation (STI)
  • Transient enhanced diffusion (TED)
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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