Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

Chel Jong Choi, Tae Yeon Seong, Key Min Lee, Joo Hyoung Lee, Young Jin Park, Hi Deok Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume4
Issue number11
DOIs
Publication statusPublished - 2001 Nov 1
Externally publishedYes

Fingerprint

MOS devices
semiconductor devices
isolation
CMOS
n-type semiconductors
Transmission electron microscopy
metal oxide semiconductors
transmission electron microscopy
leakage
profiles
Metals
Leakage currents
Oxides
Etching
Doping (additives)
etching
oxides
simulation
Oxide semiconductors

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes. / Choi, Chel Jong; Seong, Tae Yeon; Lee, Key Min; Lee, Joo Hyoung; Park, Young Jin; Lee, Hi Deok.

In: Electrochemical and Solid-State Letters, Vol. 4, No. 11, 01.11.2001.

Research output: Contribution to journalArticle

@article{07b4bfd04ef84119a19231f550b51f90,
title = "Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes",
abstract = "Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.",
author = "Choi, {Chel Jong} and Seong, {Tae Yeon} and Lee, {Key Min} and Lee, {Joo Hyoung} and Park, {Young Jin} and Lee, {Hi Deok}",
year = "2001",
month = "11",
day = "1",
doi = "10.1149/1.1403216",
language = "English",
volume = "4",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

TY - JOUR

T1 - Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Lee, Key Min

AU - Lee, Joo Hyoung

AU - Park, Young Jin

AU - Lee, Hi Deok

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.

AB - Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.

UR - http://www.scopus.com/inward/record.url?scp=0035525630&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035525630&partnerID=8YFLogxK

U2 - 10.1149/1.1403216

DO - 10.1149/1.1403216

M3 - Article

AN - SCOPUS:0035525630

VL - 4

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 11

ER -