Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

Chel Jong Choi, Tae Yeon Seong, Key Min Lee, Joo Hyoung Lee, Young Jin Park, Hi Deok Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)


Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.

Original languageEnglish
Pages (from-to)G88-G90
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - 2001 Nov 1


ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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