Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

Chel Jong Choi; Tae Yeon Seong; Key Min Lee; Joo Hyoung Lee; Young Jin Park; Hi Deok Lee

doi:10.1149/1.1403216

Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

Chel Jong Choi, Tae Yeon Seong, Key Min Lee, Joo Hyoung Lee, Young Jin Park, Hi Deok Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.

Original language	English
Pages (from-to)	G88-G90
Journal	Electrochemical and Solid-State Letters
Volume	4
Issue number	11
DOIs	https://doi.org/10.1149/1.1403216
Publication status	Published - 2001 Nov
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1403216

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title = "Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes",

abstract = "Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.",

author = "Choi, {Chel Jong} and Seong, {Tae Yeon} and Lee, {Key Min} and Lee, {Joo Hyoung} and Park, {Young Jin} and Lee, {Hi Deok}",

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T1 - Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Lee, Key Min

AU - Lee, Joo Hyoung

AU - Park, Young Jin

AU - Lee, Hi Deok

PY - 2001/11

Y1 - 2001/11

N2 - Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.

AB - Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.

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IS - 11

ER -

Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

Abstract

ASJC Scopus subject areas

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