Transmission electron microscopy (TEM) combined with selective chemical etching has been performed to investigate the leakage mechanism in n-type metal oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that dopant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a source for leakage current in the nMOS.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering