Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering

Gi Soon Park, Van Ben Chu, Byoung Woo Kim, Dong Wook Kim, Hyung Suk Oh, Yun Jeong Hwang, Byoung Koun Min

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.

Original languageEnglish
Pages (from-to)9894-9899
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number12
Publication statusPublished - 2018 Mar 28

ASJC Scopus subject areas

  • Materials Science(all)


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