Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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Abstract

The activation kinetics of implanted Si+ into p-GaN were examined, yielding an energy for electrical activation of 1.65 eV. The resulting activation efficiency reached a maximum of 30% for an ion dose of 2.5X1014 cm-2 after annealing at 1200°C for 2 min.

Original languageEnglish
Pages (from-to)4987-4989
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number24
DOIs
Publication statusPublished - 2003 Dec 15
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Irokawa, Y., Kim, J., Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., & Chyi, J. I. (2003). Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes. Applied Physics Letters, 83(24), 4987-4989. https://doi.org/10.1063/1.1634382