Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

Y. Irokawa, Ji Hyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The activation kinetics of implanted Si+ into p-GaN were examined, yielding an energy for electrical activation of 1.65 eV. The resulting activation efficiency reached a maximum of 30% for an ion dose of 2.5X1014 cm-2 after annealing at 1200°C for 2 min.

Original languageEnglish
Pages (from-to)4987-4989
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number24
DOIs
Publication statusPublished - 2003 Dec 15
Externally publishedYes

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Schottky diodes
activation
kinetics
dosage
annealing
ions
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Irokawa, Y., Kim, J. H., Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., ... Chyi, J. I. (2003). Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes. Applied Physics Letters, 83(24), 4987-4989. https://doi.org/10.1063/1.1634382

Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes. / Irokawa, Y.; Kim, Ji Hyun; Ren, F.; Baik, K. H.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.

In: Applied Physics Letters, Vol. 83, No. 24, 15.12.2003, p. 4987-4989.

Research output: Contribution to journalArticle

Irokawa, Y, Kim, JH, Ren, F, Baik, KH, Gila, BP, Abernathy, CR, Pearton, SJ, Pan, CC, Chen, GT & Chyi, JI 2003, 'Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes', Applied Physics Letters, vol. 83, no. 24, pp. 4987-4989. https://doi.org/10.1063/1.1634382
Irokawa, Y. ; Kim, Ji Hyun ; Ren, F. ; Baik, K. H. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. / Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes. In: Applied Physics Letters. 2003 ; Vol. 83, No. 24. pp. 4987-4989.
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