The activation kinetics of implanted Si+ into p-GaN were examined, yielding an energy for electrical activation of 1.65 eV. The resulting activation efficiency reached a maximum of 30% for an ion dose of 2.5X1014 cm-2 after annealing at 1200°C for 2 min.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Dec 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)