Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

Y. Irokawa; Jihyun Kim; F. Ren; K. H. Baik; B. P. Gila; C. R. Abernathy; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi

doi:10.1063/1.1634382

Activation kinetics of implanted Si⁺ in GaN and application to fabricating lateral Schottky diodes

Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The activation kinetics of implanted Si⁺ into p-GaN were examined, yielding an energy for electrical activation of 1.65 eV. The resulting activation efficiency reached a maximum of 30% for an ion dose of 2.5X10¹⁴ cm^-2 after annealing at 1200°C for 2 min.

Original language	English
Pages (from-to)	4987-4989
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1634382
Publication status	Published - 2003 Dec 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes",

abstract = "The activation kinetics of implanted Si+ into p-GaN were examined, yielding an energy for electrical activation of 1.65 eV. The resulting activation efficiency reached a maximum of 30% for an ion dose of 2.5X1014 cm-2 after annealing at 1200°C for 2 min.",

author = "Y. Irokawa and Jihyun Kim and F. Ren and Baik, {K. H.} and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.}",

year = "2003",

month = dec,

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pages = "4987--4989",

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TY - JOUR

T1 - Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

AU - Irokawa, Y.

AU - Kim, Jihyun

AU - Ren, F.

AU - Baik, K. H.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The activation kinetics of implanted Si+ into p-GaN were examined, yielding an energy for electrical activation of 1.65 eV. The resulting activation efficiency reached a maximum of 30% for an ion dose of 2.5X1014 cm-2 after annealing at 1200°C for 2 min.

AB - The activation kinetics of implanted Si+ into p-GaN were examined, yielding an energy for electrical activation of 1.65 eV. The resulting activation efficiency reached a maximum of 30% for an ion dose of 2.5X1014 cm-2 after annealing at 1200°C for 2 min.

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U2 - 10.1063/1.1634382

DO - 10.1063/1.1634382

M3 - Article

AN - SCOPUS:0345872405

SN - 0003-6951

VL - 83

SP - 4987

EP - 4989

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Activation kinetics of implanted Si⁺ in GaN and application to fabricating lateral Schottky diodes

Abstract

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