Active Photonic Crystal Devices in III-V Semiconductors

Y. H. Lee, H. Y. Ryu, Hong Kyu Park, S. H. Kwon, S. H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsL.A. Eldada
Pages61-68
Number of pages8
Volume5225
Publication statusPublished - 2003
Externally publishedYes
EventNano- and Micro-Optics for Information Systems - San Diego, CA, United States
Duration: 2003 Aug 32003 Aug 4

Other

OtherNano- and Micro-Optics for Information Systems
CountryUnited States
CitySan Diego, CA
Period03/8/303/8/4

Fingerprint

Photonic crystals
photonics
crystals
Crystal resonators
Lasers
cells
Crystal lattices
lasers
lasing
Q factors
resonators
Wavelength
III-V semiconductors
configurations
wavelengths

Keywords

  • Active devices
  • Photonic badgap
  • Photonic crystal laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Lee, Y. H., Ryu, H. Y., Park, H. K., Kwon, S. H., & Kim, S. H. (2003). Active Photonic Crystal Devices in III-V Semiconductors. In L. A. Eldada (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5225, pp. 61-68)

Active Photonic Crystal Devices in III-V Semiconductors. / Lee, Y. H.; Ryu, H. Y.; Park, Hong Kyu; Kwon, S. H.; Kim, S. H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / L.A. Eldada. Vol. 5225 2003. p. 61-68.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, YH, Ryu, HY, Park, HK, Kwon, SH & Kim, SH 2003, Active Photonic Crystal Devices in III-V Semiconductors. in LA Eldada (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5225, pp. 61-68, Nano- and Micro-Optics for Information Systems, San Diego, CA, United States, 03/8/3.
Lee YH, Ryu HY, Park HK, Kwon SH, Kim SH. Active Photonic Crystal Devices in III-V Semiconductors. In Eldada LA, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5225. 2003. p. 61-68
Lee, Y. H. ; Ryu, H. Y. ; Park, Hong Kyu ; Kwon, S. H. ; Kim, S. H. / Active Photonic Crystal Devices in III-V Semiconductors. Proceedings of SPIE - The International Society for Optical Engineering. editor / L.A. Eldada. Vol. 5225 2003. pp. 61-68
@inproceedings{84c0fbd43d46471b9bb6b9901d9c0999,
title = "Active Photonic Crystal Devices in III-V Semiconductors",
abstract = "Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.",
keywords = "Active devices, Photonic badgap, Photonic crystal laser",
author = "Lee, {Y. H.} and Ryu, {H. Y.} and Park, {Hong Kyu} and Kwon, {S. H.} and Kim, {S. H.}",
year = "2003",
language = "English",
volume = "5225",
pages = "61--68",
editor = "L.A. Eldada",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Active Photonic Crystal Devices in III-V Semiconductors

AU - Lee, Y. H.

AU - Ryu, H. Y.

AU - Park, Hong Kyu

AU - Kwon, S. H.

AU - Kim, S. H.

PY - 2003

Y1 - 2003

N2 - Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.

AB - Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.

KW - Active devices

KW - Photonic badgap

KW - Photonic crystal laser

UR - http://www.scopus.com/inward/record.url?scp=1242286392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1242286392&partnerID=8YFLogxK

M3 - Conference contribution

VL - 5225

SP - 61

EP - 68

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Eldada, L.A.

ER -