Abstract
Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 61-68 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5225 |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | Nano- and Micro-Optics for Information Systems - San Diego, CA, United States Duration: 2003 Aug 3 → 2003 Aug 4 |
Keywords
- Active devices
- Photonic badgap
- Photonic crystal laser
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Cite this
Lee, Y. H., Ryu, H. Y., Park, H. G., Kwon, S. H., & Kim, S. H. (2003). Active Photonic Crystal Devices in III-V Semiconductors. Proceedings of SPIE - The International Society for Optical Engineering, 5225, 61-68.