Active Photonic Crystal Devices in III-V Semiconductors

Y. H. Lee; H. Y. Ryu; H. G. Park; S. H. Kwon; S. H. Kim

Active Photonic Crystal Devices in III-V Semiconductors

Y. H. Lee, H. Y. Ryu, H. G. Park, S. H. Kwon, S. H. Kim

Research output: Contribution to journal › Conference article › peer-review

Abstract

Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.

Original language	English
Pages (from-to)	61-68
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5225
Publication status	Published - 2003
Externally published	Yes
Event	Nano- and Micro-Optics for Information Systems - San Diego, CA, United States Duration: 2003 Aug 3 → 2003 Aug 4

Keywords

Active devices
Photonic badgap
Photonic crystal laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Active Photonic Crystal Devices in III-V Semiconductors",

abstract = "Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.",

keywords = "Active devices, Photonic badgap, Photonic crystal laser",

author = "Lee, {Y. H.} and Ryu, {H. Y.} and Park, {H. G.} and Kwon, {S. H.} and Kim, {S. H.}",

year = "2003",

language = "English",

volume = "5225",

pages = "61--68",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Nano- and Micro-Optics for Information Systems ; Conference date: 03-08-2003 Through 04-08-2003",

}

TY - JOUR

T1 - Active Photonic Crystal Devices in III-V Semiconductors

AU - Lee, Y. H.

AU - Ryu, H. Y.

AU - Park, H. G.

AU - Kwon, S. H.

AU - Kim, S. H.

PY - 2003

Y1 - 2003

N2 - Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.

AB - Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.

KW - Active devices

KW - Photonic badgap

KW - Photonic crystal laser

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UR - http://www.scopus.com/inward/citedby.url?scp=1242286392&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:1242286392

VL - 5225

SP - 61

EP - 68

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Nano- and Micro-Optics for Information Systems

Y2 - 3 August 2003 through 4 August 2003

ER -