Adsorption and growth of Xe adlayers on the Cu(111) surface

Ji Yong Park, Se-Jong Kahng, U. D. Ham, Y. Kuk, K. Miyake, K. Hata, H. Shigekawa

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The adsorption and growth of Xe layers on the Cu(111) surface were studied with a low-temperature scanning tunneling microscope. Initially, Xe atoms preferentially adsorb at the step, revealing two different wetting behaviors at the upper and the lower step edges at the coverage of <0.1 monolayer. Three-dimensional island growth is followed on the terrace at the coverage of >0.2 monolayer when grown at <20 K. The island growth is attributed to inhomogeneous nucleation and lower diffusivity of Xe on the Xe monolayer than on the Cu(111) surface. The diffusion barriers, the two-dimensional barrier on a terrace and the one-dimensional barrier along a step, and the step-down barrier determine the growth morphology of Xe layers as the substrate temperature was raised.

Original languageEnglish
Pages (from-to)16934-16940
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
Publication statusPublished - 1999 Dec 15
Externally publishedYes


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Park, J. Y., Kahng, S-J., Ham, U. D., Kuk, Y., Miyake, K., Hata, K., & Shigekawa, H. (1999). Adsorption and growth of Xe adlayers on the Cu(111) surface. Physical Review B - Condensed Matter and Materials Physics, 60(24), 16934-16940.