Advancements in Complementary Carbon Nanotube Field-Effect Transistors

Ali Javey, Qian Wang, Woong Kim, Hongjie Dai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Citations (Scopus)

Abstract

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to chemically intrinsic SWNTs, with no or small Schottky barriers (SB), afford high ON-state currents up to 20 μA per tube. The lack of significant Fermi-level pinning at the nanotube-metal interfaces allows for fine-tuning of the barrier heights for p-and n-channel conductions by changing the contact metals. The air-stable p- and n-FETs thus obtained can be used for complementary nanoelectronics, as demonstrated with the fabrication of an inverter. Other important issues regarding nanotube FETs including hysteresis, OFF-state leak currents, choice of nanotube diameter, and threshold voltage control are discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages741-744
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

Other

OtherIEEE International Electron Devices Meeting
CountryUnited States
CityWashington, DC
Period03/12/803/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Javey, A., Wang, Q., Kim, W., & Dai, H. (2003). Advancements in Complementary Carbon Nanotube Field-Effect Transistors. In Technical Digest - International Electron Devices Meeting (pp. 741-744)