Advances in Ga2O3 processing and devices

Jiancheng Yang, Patrick H. Carey, Shihyun Ahn, F. Ren, Soohwan Jang, Ji Hyun Kim, David Hays, S. J. Pearton, A. Kuramata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.

Original languageEnglish
Title of host publicationECS Transactions
EditorsS. Bhansali, S. Brankovic, D. A. Buttry, D. Chu, H. Imahori, H. Katayama, O. Leonte, S. Mukerjee, R. Mukundan, Y. Oren, L. Romankiw, N. Sharma, A. Simonian, P. C. Trulove, J. T. Vaughey, M. Winter, P. N. Bartlett, V. Di Noto, M. Doeff, T. Druffel, J. M. Fenton, J. Fergus, Y. Fukunaka, M. Itagaki, J. Koehne, R. Kostecki, R. P. Lynch, I. Milosev, S. R. Narayan, V. Subramanian, T. Tatsuma, N. Wu, Z. Chen, L. M. Haverhals, P. Hesketh, A. C. Hillier, M. Inaba, G. Krumdick, J. Leddy, M. Manivannan, V. Maurice, S. Mitra, J. Muldoon, J. Noel, K. Rajeshwar, V. R. Subramanian, A. H. Suroviec, K. Suto, G. Zangari, P. Allongue, N. Birbilis, O. V. Boltalina, S. Calabrese Barton, V. Chaitanya, D. Chidambaram, J. K. Hite, J. J. Lee, R. A. Mantz, J. Mauzeroll, S. D. Minteer, M. E. Orazem, R. P. Ramasamy, D. P. Riemer, D. Roeper, M. Rohwerder, M. J. Sailor, D. T. Schwartz, J. A. Staser, G. Wu, H. Xu, R. Alkire, T. J. Anderson, M. Bayachou, A. B. Bocarsly, J. W. Choi, M. Innocenti, S. H. Kilgore, D. J. Kim, P. J. Kulesza, Y. C. Lu, P. Marcus, M. Mauter, J. D. Nicholas, S. Pylypenko, C. Rhodes, L. Soleymani, M. Tao, Y. Xing, A. P. Abbott, B. A. Chin, D. E. Cliffel, E. A. Douglas, K. Edstrom, H. Hamada, H. N. McMurray, Y. S. Meng, E. L. Miller, M. Navaei, S. S. Nonnenmann, C. O'Dwyer, P. Pharkya, S. V. Rotkin, J. L. M. Rupp, G. Williams, C. Bock, R. Buchheit, G. T. Cheek, H. Deligianni, C. Johnson, J. G. Park, P. N. Pintauro, K. C. Smith, P. Vanysek, H. Wang, J. F. Whitacre, J. Xiao, M. T. Carter, N. Dimitrov, J. Fransaer, D. Guyomard, B. L. Lucht, L. Nagahara, P. M. Natishan, P. K. Sekhar, D. K. Smith, G. R. Stafford, K. B. Sundaram, N. Vasiljevic, S. Virtanen, W. Wang, D. L. Wood, J. J. Yang
PublisherElectrochemical Society Inc.
Pages959-972
Number of pages14
Volume80
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2017 Jan 1
Event232nd ECS Meeting - National Harbor, United States
Duration: 2017 Oct 12017 Oct 5

Other

Other232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period17/10/117/10/5

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Plasma etching
Ohmic contacts
Processing
Photodetectors
Power electronics
Ion implantation
Transistors
Energy gap
Semiconductor materials
Crystalline materials
Plasmas
Hydrogen
Electric potential
Power markets

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, J., Carey, P. H., Ahn, S., Ren, F., Jang, S., Kim, J. H., ... Kuramata, A. (2017). Advances in Ga2O3 processing and devices. In S. Bhansali, S. Brankovic, D. A. Buttry, D. Chu, H. Imahori, H. Katayama, O. Leonte, S. Mukerjee, R. Mukundan, Y. Oren, L. Romankiw, N. Sharma, A. Simonian, P. C. Trulove, J. T. Vaughey, M. Winter, P. N. Bartlett, V. Di Noto, M. Doeff, T. Druffel, J. M. Fenton, J. Fergus, Y. Fukunaka, M. Itagaki, J. Koehne, R. Kostecki, R. P. Lynch, I. Milosev, S. R. Narayan, V. Subramanian, T. Tatsuma, N. Wu, Z. Chen, L. M. Haverhals, P. Hesketh, A. C. Hillier, M. Inaba, G. Krumdick, J. Leddy, M. Manivannan, V. Maurice, S. Mitra, J. Muldoon, J. Noel, K. Rajeshwar, V. R. Subramanian, A. H. Suroviec, K. Suto, G. Zangari, P. Allongue, N. Birbilis, O. V. Boltalina, S. Calabrese Barton, V. Chaitanya, D. Chidambaram, J. K. Hite, J. J. Lee, R. A. Mantz, J. Mauzeroll, S. D. Minteer, M. E. Orazem, R. P. Ramasamy, D. P. Riemer, D. Roeper, M. Rohwerder, M. J. Sailor, D. T. Schwartz, J. A. Staser, G. Wu, H. Xu, R. Alkire, T. J. Anderson, M. Bayachou, A. B. Bocarsly, J. W. Choi, M. Innocenti, S. H. Kilgore, D. J. Kim, P. J. Kulesza, Y. C. Lu, P. Marcus, M. Mauter, J. D. Nicholas, S. Pylypenko, C. Rhodes, L. Soleymani, M. Tao, Y. Xing, A. P. Abbott, B. A. Chin, D. E. Cliffel, E. A. Douglas, K. Edstrom, H. Hamada, H. N. McMurray, Y. S. Meng, E. L. Miller, M. Navaei, S. S. Nonnenmann, C. O'Dwyer, P. Pharkya, S. V. Rotkin, J. L. M. Rupp, G. Williams, C. Bock, R. Buchheit, G. T. Cheek, H. Deligianni, C. Johnson, J. G. Park, P. N. Pintauro, K. C. Smith, P. Vanysek, H. Wang, J. F. Whitacre, J. Xiao, M. T. Carter, N. Dimitrov, J. Fransaer, D. Guyomard, B. L. Lucht, L. Nagahara, P. M. Natishan, P. K. Sekhar, D. K. Smith, G. R. Stafford, K. B. Sundaram, N. Vasiljevic, S. Virtanen, W. Wang, D. L. Wood, ... J. J. Yang (Eds.), ECS Transactions (10 ed., Vol. 80, pp. 959-972). Electrochemical Society Inc.. https://doi.org/10.1149/08010.0959ecst

Advances in Ga2O3 processing and devices. / Yang, Jiancheng; Carey, Patrick H.; Ahn, Shihyun; Ren, F.; Jang, Soohwan; Kim, Ji Hyun; Hays, David; Pearton, S. J.; Kuramata, A.

ECS Transactions. ed. / S. Bhansali; S. Brankovic; D. A. Buttry; D. Chu; H. Imahori; H. Katayama; O. Leonte; S. Mukerjee; R. Mukundan; Y. Oren; L. Romankiw; N. Sharma; A. Simonian; P. C. Trulove; J. T. Vaughey; M. Winter; P. N. Bartlett; V. Di Noto; M. Doeff; T. Druffel; J. M. Fenton; J. Fergus; Y. Fukunaka; M. Itagaki; J. Koehne; R. Kostecki; R. P. Lynch; I. Milosev; S. R. Narayan; V. Subramanian; T. Tatsuma; N. Wu; Z. Chen; L. M. Haverhals; P. Hesketh; A. C. Hillier; M. Inaba; G. Krumdick; J. Leddy; M. Manivannan; V. Maurice; S. Mitra; J. Muldoon; J. Noel; K. Rajeshwar; V. R. Subramanian; A. H. Suroviec; K. Suto; G. Zangari; P. Allongue; N. Birbilis; O. V. Boltalina; S. Calabrese Barton; V. Chaitanya; D. Chidambaram; J. K. Hite; J. J. Lee; R. A. Mantz; J. Mauzeroll; S. D. Minteer; M. E. Orazem; R. P. Ramasamy; D. P. Riemer; D. Roeper; M. Rohwerder; M. J. Sailor; D. T. Schwartz; J. A. Staser; G. Wu; H. Xu; R. Alkire; T. J. Anderson; M. Bayachou; A. B. Bocarsly; J. W. Choi; M. Innocenti; S. H. Kilgore; D. J. Kim; P. J. Kulesza; Y. C. Lu; P. Marcus; M. Mauter; J. D. Nicholas; S. Pylypenko; C. Rhodes; L. Soleymani; M. Tao; Y. Xing; A. P. Abbott; B. A. Chin; D. E. Cliffel; E. A. Douglas; K. Edstrom; H. Hamada; H. N. McMurray; Y. S. Meng; E. L. Miller; M. Navaei; S. S. Nonnenmann; C. O'Dwyer; P. Pharkya; S. V. Rotkin; J. L. M. Rupp; G. Williams; C. Bock; R. Buchheit; G. T. Cheek; H. Deligianni; C. Johnson; J. G. Park; P. N. Pintauro; K. C. Smith; P. Vanysek; H. Wang; J. F. Whitacre; J. Xiao; M. T. Carter; N. Dimitrov; J. Fransaer; D. Guyomard; B. L. Lucht; L. Nagahara; P. M. Natishan; P. K. Sekhar; D. K. Smith; G. R. Stafford; K. B. Sundaram; N. Vasiljevic; S. Virtanen; W. Wang; D. L. Wood; J. J. Yang. Vol. 80 10. ed. Electrochemical Society Inc., 2017. p. 959-972.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, J, Carey, PH, Ahn, S, Ren, F, Jang, S, Kim, JH, Hays, D, Pearton, SJ & Kuramata, A 2017, Advances in Ga2O3 processing and devices. in S Bhansali, S Brankovic, DA Buttry, D Chu, H Imahori, H Katayama, O Leonte, S Mukerjee, R Mukundan, Y Oren, L Romankiw, N Sharma, A Simonian, PC Trulove, JT Vaughey, M Winter, PN Bartlett, V Di Noto, M Doeff, T Druffel, JM Fenton, J Fergus, Y Fukunaka, M Itagaki, J Koehne, R Kostecki, RP Lynch, I Milosev, SR Narayan, V Subramanian, T Tatsuma, N Wu, Z Chen, LM Haverhals, P Hesketh, AC Hillier, M Inaba, G Krumdick, J Leddy, M Manivannan, V Maurice, S Mitra, J Muldoon, J Noel, K Rajeshwar, VR Subramanian, AH Suroviec, K Suto, G Zangari, P Allongue, N Birbilis, OV Boltalina, S Calabrese Barton, V Chaitanya, D Chidambaram, JK Hite, JJ Lee, RA Mantz, J Mauzeroll, SD Minteer, ME Orazem, RP Ramasamy, DP Riemer, D Roeper, M Rohwerder, MJ Sailor, DT Schwartz, JA Staser, G Wu, H Xu, R Alkire, TJ Anderson, M Bayachou, AB Bocarsly, JW Choi, M Innocenti, SH Kilgore, DJ Kim, PJ Kulesza, YC Lu, P Marcus, M Mauter, JD Nicholas, S Pylypenko, C Rhodes, L Soleymani, M Tao, Y Xing, AP Abbott, BA Chin, DE Cliffel, EA Douglas, K Edstrom, H Hamada, HN McMurray, YS Meng, EL Miller, M Navaei, SS Nonnenmann, C O'Dwyer, P Pharkya, SV Rotkin, JLM Rupp, G Williams, C Bock, R Buchheit, GT Cheek, H Deligianni, C Johnson, JG Park, PN Pintauro, KC Smith, P Vanysek, H Wang, JF Whitacre, J Xiao, MT Carter, N Dimitrov, J Fransaer, D Guyomard, BL Lucht, L Nagahara, PM Natishan, PK Sekhar, DK Smith, GR Stafford, KB Sundaram, N Vasiljevic, S Virtanen, W Wang, DL Wood & JJ Yang (eds), ECS Transactions. 10 edn, vol. 80, Electrochemical Society Inc., pp. 959-972, 232nd ECS Meeting, National Harbor, United States, 17/10/1. https://doi.org/10.1149/08010.0959ecst
Yang J, Carey PH, Ahn S, Ren F, Jang S, Kim JH et al. Advances in Ga2O3 processing and devices. In Bhansali S, Brankovic S, Buttry DA, Chu D, Imahori H, Katayama H, Leonte O, Mukerjee S, Mukundan R, Oren Y, Romankiw L, Sharma N, Simonian A, Trulove PC, Vaughey JT, Winter M, Bartlett PN, Di Noto V, Doeff M, Druffel T, Fenton JM, Fergus J, Fukunaka Y, Itagaki M, Koehne J, Kostecki R, Lynch RP, Milosev I, Narayan SR, Subramanian V, Tatsuma T, Wu N, Chen Z, Haverhals LM, Hesketh P, Hillier AC, Inaba M, Krumdick G, Leddy J, Manivannan M, Maurice V, Mitra S, Muldoon J, Noel J, Rajeshwar K, Subramanian VR, Suroviec AH, Suto K, Zangari G, Allongue P, Birbilis N, Boltalina OV, Calabrese Barton S, Chaitanya V, Chidambaram D, Hite JK, Lee JJ, Mantz RA, Mauzeroll J, Minteer SD, Orazem ME, Ramasamy RP, Riemer DP, Roeper D, Rohwerder M, Sailor MJ, Schwartz DT, Staser JA, Wu G, Xu H, Alkire R, Anderson TJ, Bayachou M, Bocarsly AB, Choi JW, Innocenti M, Kilgore SH, Kim DJ, Kulesza PJ, Lu YC, Marcus P, Mauter M, Nicholas JD, Pylypenko S, Rhodes C, Soleymani L, Tao M, Xing Y, Abbott AP, Chin BA, Cliffel DE, Douglas EA, Edstrom K, Hamada H, McMurray HN, Meng YS, Miller EL, Navaei M, Nonnenmann SS, O'Dwyer C, Pharkya P, Rotkin SV, Rupp JLM, Williams G, Bock C, Buchheit R, Cheek GT, Deligianni H, Johnson C, Park JG, Pintauro PN, Smith KC, Vanysek P, Wang H, Whitacre JF, Xiao J, Carter MT, Dimitrov N, Fransaer J, Guyomard D, Lucht BL, Nagahara L, Natishan PM, Sekhar PK, Smith DK, Stafford GR, Sundaram KB, Vasiljevic N, Virtanen S, Wang W, Wood DL, Yang JJ, editors, ECS Transactions. 10 ed. Vol. 80. Electrochemical Society Inc. 2017. p. 959-972 https://doi.org/10.1149/08010.0959ecst
Yang, Jiancheng ; Carey, Patrick H. ; Ahn, Shihyun ; Ren, F. ; Jang, Soohwan ; Kim, Ji Hyun ; Hays, David ; Pearton, S. J. ; Kuramata, A. / Advances in Ga2O3 processing and devices. ECS Transactions. editor / S. Bhansali ; S. Brankovic ; D. A. Buttry ; D. Chu ; H. Imahori ; H. Katayama ; O. Leonte ; S. Mukerjee ; R. Mukundan ; Y. Oren ; L. Romankiw ; N. Sharma ; A. Simonian ; P. C. Trulove ; J. T. Vaughey ; M. Winter ; P. N. Bartlett ; V. Di Noto ; M. Doeff ; T. Druffel ; J. M. Fenton ; J. Fergus ; Y. Fukunaka ; M. Itagaki ; J. Koehne ; R. Kostecki ; R. P. Lynch ; I. Milosev ; S. R. Narayan ; V. Subramanian ; T. Tatsuma ; N. Wu ; Z. Chen ; L. M. Haverhals ; P. Hesketh ; A. C. Hillier ; M. Inaba ; G. Krumdick ; J. Leddy ; M. Manivannan ; V. Maurice ; S. Mitra ; J. Muldoon ; J. Noel ; K. Rajeshwar ; V. R. Subramanian ; A. H. Suroviec ; K. Suto ; G. Zangari ; P. Allongue ; N. Birbilis ; O. V. Boltalina ; S. Calabrese Barton ; V. Chaitanya ; D. Chidambaram ; J. K. Hite ; J. J. Lee ; R. A. Mantz ; J. Mauzeroll ; S. D. Minteer ; M. E. Orazem ; R. P. Ramasamy ; D. P. Riemer ; D. Roeper ; M. Rohwerder ; M. J. Sailor ; D. T. Schwartz ; J. A. Staser ; G. Wu ; H. Xu ; R. Alkire ; T. J. Anderson ; M. Bayachou ; A. B. Bocarsly ; J. W. Choi ; M. Innocenti ; S. H. Kilgore ; D. J. Kim ; P. J. Kulesza ; Y. C. Lu ; P. Marcus ; M. Mauter ; J. D. Nicholas ; S. Pylypenko ; C. Rhodes ; L. Soleymani ; M. Tao ; Y. Xing ; A. P. Abbott ; B. A. Chin ; D. E. Cliffel ; E. A. Douglas ; K. Edstrom ; H. Hamada ; H. N. McMurray ; Y. S. Meng ; E. L. Miller ; M. Navaei ; S. S. Nonnenmann ; C. O'Dwyer ; P. Pharkya ; S. V. Rotkin ; J. L. M. Rupp ; G. Williams ; C. Bock ; R. Buchheit ; G. T. Cheek ; H. Deligianni ; C. Johnson ; J. G. Park ; P. N. Pintauro ; K. C. Smith ; P. Vanysek ; H. Wang ; J. F. Whitacre ; J. Xiao ; M. T. Carter ; N. Dimitrov ; J. Fransaer ; D. Guyomard ; B. L. Lucht ; L. Nagahara ; P. M. Natishan ; P. K. Sekhar ; D. K. Smith ; G. R. Stafford ; K. B. Sundaram ; N. Vasiljevic ; S. Virtanen ; W. Wang ; D. L. Wood ; J. J. Yang. Vol. 80 10. ed. Electrochemical Society Inc., 2017. pp. 959-972
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T1 - Advances in Ga2O3 processing and devices

AU - Yang, Jiancheng

AU - Carey, Patrick H.

AU - Ahn, Shihyun

AU - Ren, F.

AU - Jang, Soohwan

AU - Kim, Ji Hyun

AU - Hays, David

AU - Pearton, S. J.

AU - Kuramata, A.

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N2 - Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.

AB - Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.

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A2 - Bhansali, S.

A2 - Brankovic, S.

A2 - Buttry, D. A.

A2 - Chu, D.

A2 - Imahori, H.

A2 - Katayama, H.

A2 - Leonte, O.

A2 - Mukerjee, S.

A2 - Mukundan, R.

A2 - Oren, Y.

A2 - Romankiw, L.

A2 - Sharma, N.

A2 - Simonian, A.

A2 - Trulove, P. C.

A2 - Vaughey, J. T.

A2 - Winter, M.

A2 - Bartlett, P. N.

A2 - Di Noto, V.

A2 - Doeff, M.

A2 - Druffel, T.

A2 - Fenton, J. M.

A2 - Fergus, J.

A2 - Fukunaka, Y.

A2 - Itagaki, M.

A2 - Koehne, J.

A2 - Kostecki, R.

A2 - Lynch, R. P.

A2 - Milosev, I.

A2 - Narayan, S. R.

A2 - Subramanian, V.

A2 - Tatsuma, T.

A2 - Wu, N.

A2 - Chen, Z.

A2 - Haverhals, L. M.

A2 - Hesketh, P.

A2 - Hillier, A. C.

A2 - Inaba, M.

A2 - Krumdick, G.

A2 - Leddy, J.

A2 - Manivannan, M.

A2 - Maurice, V.

A2 - Mitra, S.

A2 - Muldoon, J.

A2 - Noel, J.

A2 - Rajeshwar, K.

A2 - Subramanian, V. R.

A2 - Suroviec, A. H.

A2 - Suto, K.

A2 - Zangari, G.

A2 - Allongue, P.

A2 - Birbilis, N.

A2 - Boltalina, O. V.

A2 - Calabrese Barton, S.

A2 - Chaitanya, V.

A2 - Chidambaram, D.

A2 - Hite, J. K.

A2 - Lee, J. J.

A2 - Mantz, R. A.

A2 - Mauzeroll, J.

A2 - Minteer, S. D.

A2 - Orazem, M. E.

A2 - Ramasamy, R. P.

A2 - Riemer, D. P.

A2 - Roeper, D.

A2 - Rohwerder, M.

A2 - Sailor, M. J.

A2 - Schwartz, D. T.

A2 - Staser, J. A.

A2 - Wu, G.

A2 - Xu, H.

A2 - Alkire, R.

A2 - Anderson, T. J.

A2 - Bayachou, M.

A2 - Bocarsly, A. B.

A2 - Choi, J. W.

A2 - Innocenti, M.

A2 - Kilgore, S. H.

A2 - Kim, D. J.

A2 - Kulesza, P. J.

A2 - Lu, Y. C.

A2 - Marcus, P.

A2 - Mauter, M.

A2 - Nicholas, J. D.

A2 - Pylypenko, S.

A2 - Rhodes, C.

A2 - Soleymani, L.

A2 - Tao, M.

A2 - Xing, Y.

A2 - Abbott, A. P.

A2 - Chin, B. A.

A2 - Cliffel, D. E.

A2 - Douglas, E. A.

A2 - Edstrom, K.

A2 - Hamada, H.

A2 - McMurray, H. N.

A2 - Meng, Y. S.

A2 - Miller, E. L.

A2 - Navaei, M.

A2 - Nonnenmann, S. S.

A2 - O'Dwyer, C.

A2 - Pharkya, P.

A2 - Rotkin, S. V.

A2 - Rupp, J. L. M.

A2 - Williams, G.

A2 - Bock, C.

A2 - Buchheit, R.

A2 - Cheek, G. T.

A2 - Deligianni, H.

A2 - Johnson, C.

A2 - Park, J. G.

A2 - Pintauro, P. N.

A2 - Smith, K. C.

A2 - Vanysek, P.

A2 - Wang, H.

A2 - Whitacre, J. F.

A2 - Xiao, J.

A2 - Carter, M. T.

A2 - Dimitrov, N.

A2 - Fransaer, J.

A2 - Guyomard, D.

A2 - Lucht, B. L.

A2 - Nagahara, L.

A2 - Natishan, P. M.

A2 - Sekhar, P. K.

A2 - Smith, D. K.

A2 - Stafford, G. R.

A2 - Sundaram, K. B.

A2 - Vasiljevic, N.

A2 - Virtanen, S.

A2 - Wang, W.

A2 - Wood, D. L.

A2 - Yang, J. J.

PB - Electrochemical Society Inc.

ER -