Advances in Ga2O3 processing and devices

Jiancheng Yang, Patrick H. Carey, Shihyun Ahn, F. Ren, Soohwan Jang, Ji Hyun Kim, David Hays, S. J. Pearton, A. Kuramata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.

Original languageEnglish
Title of host publicationECS Transactions
EditorsS. Bhansali, S. Brankovic, D. A. Buttry, D. Chu, H. Imahori, H. Katayama, O. Leonte, S. Mukerjee, R. Mukundan, Y. Oren, L. Romankiw, N. Sharma, A. Simonian, P. C. Trulove, J. T. Vaughey, M. Winter, P. N. Bartlett, V. Di Noto, M. Doeff, T. Druffel, J. M. Fenton, J. Fergus, Y. Fukunaka, M. Itagaki, J. Koehne, R. Kostecki, R. P. Lynch, I. Milosev, S. R. Narayan, V. Subramanian, T. Tatsuma, N. Wu, Z. Chen, L. M. Haverhals, P. Hesketh, A. C. Hillier, M. Inaba, G. Krumdick, J. Leddy, M. Manivannan, V. Maurice, S. Mitra, J. Muldoon, J. Noel, K. Rajeshwar, V. R. Subramanian, A. H. Suroviec, K. Suto, G. Zangari, P. Allongue, N. Birbilis, O. V. Boltalina, S. Calabrese Barton, V. Chaitanya, D. Chidambaram, J. K. Hite, J. J. Lee, R. A. Mantz, J. Mauzeroll, S. D. Minteer, M. E. Orazem, R. P. Ramasamy, D. P. Riemer, D. Roeper, M. Rohwerder, M. J. Sailor, D. T. Schwartz, J. A. Staser, G. Wu, H. Xu, R. Alkire, T. J. Anderson, M. Bayachou, A. B. Bocarsly, J. W. Choi, M. Innocenti, S. H. Kilgore, D. J. Kim, P. J. Kulesza, Y. C. Lu, P. Marcus, M. Mauter, J. D. Nicholas, S. Pylypenko, C. Rhodes, L. Soleymani, M. Tao, Y. Xing, A. P. Abbott, B. A. Chin, D. E. Cliffel, E. A. Douglas, K. Edstrom, H. Hamada, H. N. McMurray, Y. S. Meng, E. L. Miller, M. Navaei, S. S. Nonnenmann, C. O'Dwyer, P. Pharkya, S. V. Rotkin, J. L. M. Rupp, G. Williams, C. Bock, R. Buchheit, G. T. Cheek, H. Deligianni, C. Johnson, J. G. Park, P. N. Pintauro, K. C. Smith, P. Vanysek, H. Wang, J. F. Whitacre, J. Xiao, M. T. Carter, N. Dimitrov, J. Fransaer, D. Guyomard, B. L. Lucht, L. Nagahara, P. M. Natishan, P. K. Sekhar, D. K. Smith, G. R. Stafford, K. B. Sundaram, N. Vasiljevic, S. Virtanen, W. Wang, D. L. Wood, J. J. Yang
PublisherElectrochemical Society Inc.
Pages959-972
Number of pages14
Volume80
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2017 Jan 1
Event232nd ECS Meeting - National Harbor, United States
Duration: 2017 Oct 12017 Oct 5

Other

Other232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period17/10/117/10/5

ASJC Scopus subject areas

  • Engineering(all)

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    Yang, J., Carey, P. H., Ahn, S., Ren, F., Jang, S., Kim, J. H., Hays, D., Pearton, S. J., & Kuramata, A. (2017). Advances in Ga2O3 processing and devices. In S. Bhansali, S. Brankovic, D. A. Buttry, D. Chu, H. Imahori, H. Katayama, O. Leonte, S. Mukerjee, R. Mukundan, Y. Oren, L. Romankiw, N. Sharma, A. Simonian, P. C. Trulove, J. T. Vaughey, M. Winter, P. N. Bartlett, V. Di Noto, M. Doeff, T. Druffel, J. M. Fenton, J. Fergus, Y. Fukunaka, M. Itagaki, J. Koehne, R. Kostecki, R. P. Lynch, I. Milosev, S. R. Narayan, V. Subramanian, T. Tatsuma, N. Wu, Z. Chen, L. M. Haverhals, P. Hesketh, A. C. Hillier, M. Inaba, G. Krumdick, J. Leddy, M. Manivannan, V. Maurice, S. Mitra, J. Muldoon, J. Noel, K. Rajeshwar, V. R. Subramanian, A. H. Suroviec, K. Suto, G. Zangari, P. Allongue, N. Birbilis, O. V. Boltalina, S. Calabrese Barton, V. Chaitanya, D. Chidambaram, J. K. Hite, J. J. Lee, R. A. Mantz, J. Mauzeroll, S. D. Minteer, M. E. Orazem, R. P. Ramasamy, D. P. Riemer, D. Roeper, M. Rohwerder, M. J. Sailor, D. T. Schwartz, J. A. Staser, G. Wu, H. Xu, R. Alkire, T. J. Anderson, M. Bayachou, A. B. Bocarsly, J. W. Choi, M. Innocenti, S. H. Kilgore, D. J. Kim, P. J. Kulesza, Y. C. Lu, P. Marcus, M. Mauter, J. D. Nicholas, S. Pylypenko, C. Rhodes, L. Soleymani, M. Tao, Y. Xing, A. P. Abbott, B. A. Chin, D. E. Cliffel, E. A. Douglas, K. Edstrom, H. Hamada, H. N. McMurray, Y. S. Meng, E. L. Miller, M. Navaei, S. S. Nonnenmann, C. O'Dwyer, P. Pharkya, S. V. Rotkin, J. L. M. Rupp, G. Williams, C. Bock, R. Buchheit, G. T. Cheek, H. Deligianni, C. Johnson, J. G. Park, P. N. Pintauro, K. C. Smith, P. Vanysek, H. Wang, J. F. Whitacre, J. Xiao, M. T. Carter, N. Dimitrov, J. Fransaer, D. Guyomard, B. L. Lucht, L. Nagahara, P. M. Natishan, P. K. Sekhar, D. K. Smith, G. R. Stafford, K. B. Sundaram, N. Vasiljevic, S. Virtanen, W. Wang, D. L. Wood, ... J. J. Yang (Eds.), ECS Transactions (10 ed., Vol. 80, pp. 959-972). Electrochemical Society Inc.. https://doi.org/10.1149/08010.0959ecst