Advantages and limitations of MgO as a dielectric for GaN

B. P. Gila, Ji Hyun Kim, B. Luo, A. Onstine, W. Johnson, F. Ren, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

MgO and Sc2O3 were deposited by gas source molecular beam epitaxy on GaN. MgO was found to produce lower interface state densities than Sc2O3, 2-3 × 1011 vs. 9-11 × 1011 eV-1 cm-2. The good electrical quality of the interface is believed to be due to the presence of a single crystal epitaxial layer at the GaN surface. By contrast, the MgO was found to be more sensitive to environmental and thermal degradation than the Sc2O 3. The environmental degradation is believed to be due to interaction with water vapor in the air and was suppressed by capping of the MgO. Annealing at the temperatures needed for implant activation in GaN produced significant roughening of the MgO/GaN interface and an order of magnitude increase in the interface state density. This sensitivity to thermal degradation will require changes in the processing sequence presently envisioned for e-mode devices in order to avoid damaging the interface and increasing the gate leakage in the device.

Original languageEnglish
Pages (from-to)2139-2142
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number12
DOIs
Publication statusPublished - 2003 Dec 1
Externally publishedYes

Fingerprint

Interface states
Weathering
Pyrolysis
Gas source molecular beam epitaxy
Epitaxial layers
Steam
Water vapor
thermal degradation
Chemical activation
Single crystals
Annealing
degradation
Processing
Air
water vapor
leakage
molecular beam epitaxy
Temperature
scandium oxide
activation

Keywords

  • Dielectric
  • GaN
  • Interface state density
  • MgO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Gila, B. P., Kim, J. H., Luo, B., Onstine, A., Johnson, W., Ren, F., ... Pearton, S. J. (2003). Advantages and limitations of MgO as a dielectric for GaN. Solid-State Electronics, 47(12), 2139-2142. https://doi.org/10.1016/S0038-1101(03)00186-2

Advantages and limitations of MgO as a dielectric for GaN. / Gila, B. P.; Kim, Ji Hyun; Luo, B.; Onstine, A.; Johnson, W.; Ren, F.; Abernathy, C. R.; Pearton, S. J.

In: Solid-State Electronics, Vol. 47, No. 12, 01.12.2003, p. 2139-2142.

Research output: Contribution to journalArticle

Gila, BP, Kim, JH, Luo, B, Onstine, A, Johnson, W, Ren, F, Abernathy, CR & Pearton, SJ 2003, 'Advantages and limitations of MgO as a dielectric for GaN', Solid-State Electronics, vol. 47, no. 12, pp. 2139-2142. https://doi.org/10.1016/S0038-1101(03)00186-2
Gila, B. P. ; Kim, Ji Hyun ; Luo, B. ; Onstine, A. ; Johnson, W. ; Ren, F. ; Abernathy, C. R. ; Pearton, S. J. / Advantages and limitations of MgO as a dielectric for GaN. In: Solid-State Electronics. 2003 ; Vol. 47, No. 12. pp. 2139-2142.
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