AFM modification of hydrogen-passivated Si(100) in the contact mode in air

Hai Tai Lee, Jae Seuk Oh, Seong Ju Park, Kang Ho Park, Jeong Sook Ha, El Hang Lee, Ja Yong Koo

Research output: Contribution to journalArticle

Abstract

We report on the mechanical friction method for the fabrication of Si-nanostructure on the H-passivated Si(100) substrate with a contact mode atomic force microscopy (AFM) using silicon nitride tip in air. The exposed regions by the mechanical friction between tip and sample could be sucessfully oxidized with ambient oxygen and withstood in a selective etching of unexposed regions. The width of the oxide pattern formed by this method was nanometer scale. As the etching time and scan rate were decreased, the degradation of pattern could be decreased producing an improved line shape. This study also showed that there exists a threshold tip force for the oxide line formation.

Original languageEnglish
Pages (from-to)S66-S69
JournalJournal of the Korean Physical Society
Volume31
Issue numberSUPPL. PART 1
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Lee, H. T., Oh, J. S., Park, S. J., Park, K. H., Ha, J. S., Lee, E. H., & Koo, J. Y. (1997). AFM modification of hydrogen-passivated Si(100) in the contact mode in air. Journal of the Korean Physical Society, 31(SUPPL. PART 1), S66-S69.