We report on the mechanical friction method for the fabrication of Si-nanostructure on the H-passivated Si(100) substrate with a contact mode atomic force microscopy (AFM) using silicon nitride tip in air. The exposed regions by the mechanical friction between tip and sample could be sucessfully oxidized with ambient oxygen and withstood in a selective etching of unexposed regions. The width of the oxide pattern formed by this method was nanometer scale. As the etching time and scan rate were decreased, the degradation of pattern could be decreased producing an improved line shape. This study also showed that there exists a threshold tip force for the oxide line formation.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. PART 1|
|Publication status||Published - 1997 Dec 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)