Ag clusters on ultra-thin, ordered SiO2 films

A. K. Santra, Byoung Koun Min, D. W. Goodman

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) and low energy electron diffraction have been used to optimize the key synthetic parameters for the preparation of oriented, SiO2 films on Mo(1 1 2). Extremely flat, ultra-thin, single-crystalline SiO2 films have been prepared via deposition of silicon, its subsequent oxidation, followed by an anneal. Highly resolved STM images have been obtained for the first time on these films. At room temperature, Ag clusters grow two-dimensionally on these oriented films with a preferred orientation and sinter with a bimodal size distribution upon exposure to elevated pressures (160 mb and 60 min) of oxygen. Annealing the as-deposited Ag clusters at elevated temperatures (600 K) in ultra-high vacuum also leads to sintering.

Original languageEnglish
JournalSurface Science
Volume515
Issue number1
DOIs
Publication statusPublished - 2002 Aug 1
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
scanning tunneling microscopy
Low energy electron diffraction
Ultrahigh vacuum
Silicon
ultrahigh vacuum
sintering
Sintering
electron diffraction
Annealing
Oxygen
Crystalline materials
Oxidation
Temperature
preparation
oxidation
annealing
silicon
room temperature
oxygen

Keywords

  • Epitaxy
  • Molybdenum
  • Scanning tunneling microscopy
  • Silicon oxides
  • Silver
  • Sintering

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Ag clusters on ultra-thin, ordered SiO2 films. / Santra, A. K.; Min, Byoung Koun; Goodman, D. W.

In: Surface Science, Vol. 515, No. 1, 01.08.2002.

Research output: Contribution to journalArticle

Santra, A. K. ; Min, Byoung Koun ; Goodman, D. W. / Ag clusters on ultra-thin, ordered SiO2 films. In: Surface Science. 2002 ; Vol. 515, No. 1.
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