Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes

Jae Seong Park, Jae Ho Kim, Jin Young Na, Dae Hyun Kim, Daesung Kang, Sun Kyung Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70%, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47%. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1% and 23.7% higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.

Original languageEnglish
Pages (from-to)198-203
Number of pages6
JournalJournal of Alloys and Compounds
Volume703
DOIs
Publication statusPublished - 2017 May 5

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Nanowires
Light emitting diodes
Electrodes
aluminum gallium nitride
Aluminum Oxide
Bias voltage
Sapphire

Keywords

  • Ag nanodot
  • Ag nanowire
  • Light-emitting diode
  • Ohmic spreader

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes. / Park, Jae Seong; Kim, Jae Ho; Na, Jin Young; Kim, Dae Hyun; Kang, Daesung; Kim, Sun Kyung; Seong, Tae Yeon.

In: Journal of Alloys and Compounds, Vol. 703, 05.05.2017, p. 198-203.

Research output: Contribution to journalArticle

Park, Jae Seong ; Kim, Jae Ho ; Na, Jin Young ; Kim, Dae Hyun ; Kang, Daesung ; Kim, Sun Kyung ; Seong, Tae Yeon. / Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes. In: Journal of Alloys and Compounds. 2017 ; Vol. 703. pp. 198-203.
@article{2e458adfd2cf496db8a2b1ac36f610dd,
title = "Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes",
abstract = "We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70{\%}, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47{\%}. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1{\%} and 23.7{\%} higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.",
keywords = "Ag nanodot, Ag nanowire, Light-emitting diode, Ohmic spreader",
author = "Park, {Jae Seong} and Kim, {Jae Ho} and Na, {Jin Young} and Kim, {Dae Hyun} and Daesung Kang and Kim, {Sun Kyung} and Seong, {Tae Yeon}",
year = "2017",
month = "5",
day = "5",
doi = "10.1016/j.jallcom.2017.01.351",
language = "English",
volume = "703",
pages = "198--203",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes

AU - Park, Jae Seong

AU - Kim, Jae Ho

AU - Na, Jin Young

AU - Kim, Dae Hyun

AU - Kang, Daesung

AU - Kim, Sun Kyung

AU - Seong, Tae Yeon

PY - 2017/5/5

Y1 - 2017/5/5

N2 - We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70%, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47%. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1% and 23.7% higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.

AB - We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70%, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47%. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1% and 23.7% higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.

KW - Ag nanodot

KW - Ag nanowire

KW - Light-emitting diode

KW - Ohmic spreader

UR - http://www.scopus.com/inward/record.url?scp=85011578019&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85011578019&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2017.01.351

DO - 10.1016/j.jallcom.2017.01.351

M3 - Article

AN - SCOPUS:85011578019

VL - 703

SP - 198

EP - 203

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -