Aging effect on the optoelectronic properties of a single ZnO nanowire

Kihyun Keem, Jeongmin Kang, Dong Young Jeong, Byungdon Min, Kyoungah Cho, Hyunsuk Kim, Sangsig Kim, Young-geun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The effect of aging on the optoelectronic properties of a single ZnO nanowire is investigated in this study. The photoluminescence (PL), photocurrent spectrum, current-voltage characteristics, and photoresponse were measured for the as-grown ZnO nanowire and for the same nanowire exposed to air for three months. For the aged nanowire, the broad PL band is weaker, the intensity of the photocurrent is stronger, and the photoresponse is slower than those of the as-grown nanowire. One of the possible explanations is that the observed aging effect on the PL is due to the reduction in the number of oxygen vacancies within the nanowire and that the aging effect on the photocurrent and photoresponse originates from the formation of oxygen vacancies near the surface.

Original languageEnglish
Pages (from-to)4355-4358
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number7 A
DOIs
Publication statusPublished - 2007 Jul 4

Fingerprint

Optoelectronic devices
Nanowires
nanowires
Aging of materials
Photocurrents
photocurrents
Photoluminescence
Oxygen vacancies
photoluminescence
oxygen
Current voltage characteristics
air
electric potential
Air

Keywords

  • Aging effect
  • Nanowire
  • Photoconduction
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Aging effect on the optoelectronic properties of a single ZnO nanowire. / Keem, Kihyun; Kang, Jeongmin; Jeong, Dong Young; Min, Byungdon; Cho, Kyoungah; Kim, Hyunsuk; Kim, Sangsig; Kim, Young-geun.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 7 A, 04.07.2007, p. 4355-4358.

Research output: Contribution to journalArticle

Keem, Kihyun ; Kang, Jeongmin ; Jeong, Dong Young ; Min, Byungdon ; Cho, Kyoungah ; Kim, Hyunsuk ; Kim, Sangsig ; Kim, Young-geun. / Aging effect on the optoelectronic properties of a single ZnO nanowire. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 7 A. pp. 4355-4358.
@article{385ef81ada3b4adc99c08dc9ad4d14b5,
title = "Aging effect on the optoelectronic properties of a single ZnO nanowire",
abstract = "The effect of aging on the optoelectronic properties of a single ZnO nanowire is investigated in this study. The photoluminescence (PL), photocurrent spectrum, current-voltage characteristics, and photoresponse were measured for the as-grown ZnO nanowire and for the same nanowire exposed to air for three months. For the aged nanowire, the broad PL band is weaker, the intensity of the photocurrent is stronger, and the photoresponse is slower than those of the as-grown nanowire. One of the possible explanations is that the observed aging effect on the PL is due to the reduction in the number of oxygen vacancies within the nanowire and that the aging effect on the photocurrent and photoresponse originates from the formation of oxygen vacancies near the surface.",
keywords = "Aging effect, Nanowire, Photoconduction, ZnO",
author = "Kihyun Keem and Jeongmin Kang and Jeong, {Dong Young} and Byungdon Min and Kyoungah Cho and Hyunsuk Kim and Sangsig Kim and Young-geun Kim",
year = "2007",
month = "7",
day = "4",
doi = "10.1143/JJAP.46.4355",
language = "English",
volume = "46",
pages = "4355--4358",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7 A",

}

TY - JOUR

T1 - Aging effect on the optoelectronic properties of a single ZnO nanowire

AU - Keem, Kihyun

AU - Kang, Jeongmin

AU - Jeong, Dong Young

AU - Min, Byungdon

AU - Cho, Kyoungah

AU - Kim, Hyunsuk

AU - Kim, Sangsig

AU - Kim, Young-geun

PY - 2007/7/4

Y1 - 2007/7/4

N2 - The effect of aging on the optoelectronic properties of a single ZnO nanowire is investigated in this study. The photoluminescence (PL), photocurrent spectrum, current-voltage characteristics, and photoresponse were measured for the as-grown ZnO nanowire and for the same nanowire exposed to air for three months. For the aged nanowire, the broad PL band is weaker, the intensity of the photocurrent is stronger, and the photoresponse is slower than those of the as-grown nanowire. One of the possible explanations is that the observed aging effect on the PL is due to the reduction in the number of oxygen vacancies within the nanowire and that the aging effect on the photocurrent and photoresponse originates from the formation of oxygen vacancies near the surface.

AB - The effect of aging on the optoelectronic properties of a single ZnO nanowire is investigated in this study. The photoluminescence (PL), photocurrent spectrum, current-voltage characteristics, and photoresponse were measured for the as-grown ZnO nanowire and for the same nanowire exposed to air for three months. For the aged nanowire, the broad PL band is weaker, the intensity of the photocurrent is stronger, and the photoresponse is slower than those of the as-grown nanowire. One of the possible explanations is that the observed aging effect on the PL is due to the reduction in the number of oxygen vacancies within the nanowire and that the aging effect on the photocurrent and photoresponse originates from the formation of oxygen vacancies near the surface.

KW - Aging effect

KW - Nanowire

KW - Photoconduction

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=34547828900&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547828900&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.4355

DO - 10.1143/JJAP.46.4355

M3 - Article

AN - SCOPUS:34547828900

VL - 46

SP - 4355

EP - 4358

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 A

ER -