Abstract
We investigate the effect of Ni insertion on the electrical and thermal properties of Ag-based reflectors for GaN-based light emitting diodes (LEDs). It is shown that after annealing at 500 °C, the surface of Ag only sample becomes significantly roughened due to agglomeration, whereas the surface of Ni-inserted Ag sample get roughened with elongated Ag hillocks on an ̃100-nm-thick Ag film. The Ni-inserted Ag contacts show higher reflectance (at 460 nm) than the Ag only sample after annealing at 500 °C. The 500-°C-annealed Ni-inserted Ag samples exhibit lower specific contact resistance than the annealed Ag only contacts. LEDs fabricated with the 500-°C-annealed Ni-inserted Ag contact give lower forward-bias voltage and series resistance as compared to those of LEDs with the 500-°C-annealed Ag only contact. The LEDs with the 500-°C-annealed Niinserted Ag contact exhibit 18% higher light output power (at 20 mA) than the LEDs with the Ag only contacts annealed at 500 °C. Based on the X-ray photoelectron spectroscopy and scanning electron microscopy results, the temperature dependence of the electrical characteristics of the Ni-inserted Ag contacts is described and discussed.
| Original language | English |
|---|---|
| Article number | 052101 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 52 |
| Issue number | 5 PART 1 |
| DOIs | |
| Publication status | Published - 2013 May 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Ag/Ni/Ag multilayer reflector for GaN-based vertical light-emitting diode. / Yum, Woong Sun; Jeon, Joon Woo; Sung, Jun Suk; Jin, Sungho; Seong, Tae Yeon.
In: Japanese Journal of Applied Physics, Vol. 52, No. 5 PART 1, 052101, 01.05.2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ag/Ni/Ag multilayer reflector for GaN-based vertical light-emitting diode
AU - Yum, Woong Sun
AU - Jeon, Joon Woo
AU - Sung, Jun Suk
AU - Jin, Sungho
AU - Seong, Tae Yeon
PY - 2013/5/1
Y1 - 2013/5/1
N2 - We investigate the effect of Ni insertion on the electrical and thermal properties of Ag-based reflectors for GaN-based light emitting diodes (LEDs). It is shown that after annealing at 500 °C, the surface of Ag only sample becomes significantly roughened due to agglomeration, whereas the surface of Ni-inserted Ag sample get roughened with elongated Ag hillocks on an ̃100-nm-thick Ag film. The Ni-inserted Ag contacts show higher reflectance (at 460 nm) than the Ag only sample after annealing at 500 °C. The 500-°C-annealed Ni-inserted Ag samples exhibit lower specific contact resistance than the annealed Ag only contacts. LEDs fabricated with the 500-°C-annealed Ni-inserted Ag contact give lower forward-bias voltage and series resistance as compared to those of LEDs with the 500-°C-annealed Ag only contact. The LEDs with the 500-°C-annealed Niinserted Ag contact exhibit 18% higher light output power (at 20 mA) than the LEDs with the Ag only contacts annealed at 500 °C. Based on the X-ray photoelectron spectroscopy and scanning electron microscopy results, the temperature dependence of the electrical characteristics of the Ni-inserted Ag contacts is described and discussed.
AB - We investigate the effect of Ni insertion on the electrical and thermal properties of Ag-based reflectors for GaN-based light emitting diodes (LEDs). It is shown that after annealing at 500 °C, the surface of Ag only sample becomes significantly roughened due to agglomeration, whereas the surface of Ni-inserted Ag sample get roughened with elongated Ag hillocks on an ̃100-nm-thick Ag film. The Ni-inserted Ag contacts show higher reflectance (at 460 nm) than the Ag only sample after annealing at 500 °C. The 500-°C-annealed Ni-inserted Ag samples exhibit lower specific contact resistance than the annealed Ag only contacts. LEDs fabricated with the 500-°C-annealed Ni-inserted Ag contact give lower forward-bias voltage and series resistance as compared to those of LEDs with the 500-°C-annealed Ag only contact. The LEDs with the 500-°C-annealed Niinserted Ag contact exhibit 18% higher light output power (at 20 mA) than the LEDs with the Ag only contacts annealed at 500 °C. Based on the X-ray photoelectron spectroscopy and scanning electron microscopy results, the temperature dependence of the electrical characteristics of the Ni-inserted Ag contacts is described and discussed.
UR - http://www.scopus.com/inward/record.url?scp=84880880599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880880599&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.052101
DO - 10.7567/JJAP.52.052101
M3 - Article
AN - SCOPUS:84880880599
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 PART 1
M1 - 052101
ER -