Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes

Jin Hyeon Yun; Kyu Cheol Kim; Yeon Tae Yu; Jin Kyu Yang; Alexander Y. Polyakov; In Hwan Lee

doi:10.7567/JJAP.56.100305

Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes

Jin Hyeon Yun, Kyu Cheol Kim, Yeon Tae Yu, Jin Kyu Yang, Alexander Y. Polyakov, In Hwan Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO₂ nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.

Original language	English
Article number	100305
Journal	Japanese journal of applied physics
Volume	56
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.56.100305
Publication status	Published - 2017 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.56.100305

Cite this

@article{847d0e9d72484bef8bbe2ab620fff979,

title = "Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes",

abstract = "Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.",

author = "Yun, {Jin Hyeon} and Kim, {Kyu Cheol} and Yu, {Yeon Tae} and Yang, {Jin Kyu} and Polyakov, {Alexander Y.} and Lee, {In Hwan}",

note = "Funding Information: Acknowledgment This research was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (KRF-2017R1A2B3006141). Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

year = "2017",

month = oct,

doi = "10.7567/JJAP.56.100305",

language = "English",

volume = "56",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes

AU - Yun, Jin Hyeon

AU - Kim, Kyu Cheol

AU - Yu, Yeon Tae

AU - Yang, Jin Kyu

AU - Polyakov, Alexander Y.

AU - Lee, In Hwan

N1 - Funding Information: Acknowledgment This research was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (KRF-2017R1A2B3006141). Publisher Copyright: © 2017 The Japan Society of Applied Physics.

PY - 2017/10

Y1 - 2017/10

N2 - Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.

AB - Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.

UR - http://www.scopus.com/inward/record.url?scp=85030622457&partnerID=8YFLogxK

U2 - 10.7567/JJAP.56.100305

DO - 10.7567/JJAP.56.100305

M3 - Article

AN - SCOPUS:85030622457

SN - 0021-4922

VL - 56

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 10

M1 - 100305

ER -

Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this