Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes

Jin Hyeon Yun, Kyu Cheol Kim, Yeon Tae Yu, Jin Kyu Yang, Alexander Y. Polyakov, In-Hwan Lee

Research output: Contribution to journalArticle

Abstract

Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO 2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.

Original languageEnglish
Article number100305
JournalJapanese Journal of Applied Physics
Volume56
Issue number10
DOIs
Publication statusPublished - 2017 Oct 1

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Light emitting diodes
Plasmons
light emitting diodes
Nanoparticles
plasmons
nanoparticles
augmentation
output
Electroluminescence
electroluminescence
embedding
proximity
Photoluminescence
photoluminescence
energy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes. / Yun, Jin Hyeon; Kim, Kyu Cheol; Yu, Yeon Tae; Yang, Jin Kyu; Polyakov, Alexander Y.; Lee, In-Hwan.

In: Japanese Journal of Applied Physics, Vol. 56, No. 10, 100305, 01.10.2017.

Research output: Contribution to journalArticle

Yun, Jin Hyeon ; Kim, Kyu Cheol ; Yu, Yeon Tae ; Yang, Jin Kyu ; Polyakov, Alexander Y. ; Lee, In-Hwan. / Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes. In: Japanese Journal of Applied Physics. 2017 ; Vol. 56, No. 10.
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