Abstract
Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO 2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.
| Original language | English |
|---|---|
| Article number | 100305 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 56 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2017 Oct 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes. / Yun, Jin Hyeon; Kim, Kyu Cheol; Yu, Yeon Tae; Yang, Jin Kyu; Polyakov, Alexander Y.; Lee, In-Hwan.
In: Japanese Journal of Applied Physics, Vol. 56, No. 10, 100305, 01.10.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes
AU - Yun, Jin Hyeon
AU - Kim, Kyu Cheol
AU - Yu, Yeon Tae
AU - Yang, Jin Kyu
AU - Polyakov, Alexander Y.
AU - Lee, In-Hwan
PY - 2017/10/1
Y1 - 2017/10/1
N2 - Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO 2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.
AB - Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO 2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.
UR - http://www.scopus.com/inward/record.url?scp=85030622457&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85030622457&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.100305
DO - 10.7567/JJAP.56.100305
M3 - Article
AN - SCOPUS:85030622457
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
M1 - 100305
ER -