Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application

Tae Ho Lee; Dae Yun Kang; Tae Geun Kim

doi:10.1021/acsami.8b12385

Ag:SiO_xN_y-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application

Tae Ho Lee, Dae Yun Kang, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We fabricate a Pt/Ag:SiO_xN_y/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO_xN_y layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiO_xN_y-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.

Original language	English
Pages (from-to)	33768-33772
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	40
DOIs	https://doi.org/10.1021/acsami.8b12385
Publication status	Published - 2018 Oct 10

Keywords

conductive channel
crossbar array
programmable metallization cell
resistive switching
sneak current
threshold switching

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsami.8b12385

Cite this

@article{7989f4d0ad42410b8d3a2fd72dbe6322,

title = "Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application",

abstract = "We fabricate a Pt/Ag:SiOxNy/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiOxNy layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiOxNy-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.",

keywords = "conductive channel, crossbar array, programmable metallization cell, resistive switching, sneak current, threshold switching",

author = "Lee, {Tae Ho} and Kang, {Dae Yun} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean government (Ministry of Science, ICT & Future Planning, 2016R1A3B1908249). The authors thank the Samsung Semiconductor Research Center in Korea University for its support. Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant, funded bythe Korean government (Ministry of Science, ICT & Future Planning 2016R1A3B1908249). The authors thank the Samsung Semiconductor Research Center in Korea University for its support. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

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doi = "10.1021/acsami.8b12385",

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AU - Lee, Tae Ho

AU - Kang, Dae Yun

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean government (Ministry of Science, ICT & Future Planning, 2016R1A3B1908249). The authors thank the Samsung Semiconductor Research Center in Korea University for its support. Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant, funded bythe Korean government (Ministry of Science, ICT & Future Planning 2016R1A3B1908249). The authors thank the Samsung Semiconductor Research Center in Korea University for its support. Publisher Copyright: © 2018 American Chemical Society.

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Y1 - 2018/10/10

N2 - We fabricate a Pt/Ag:SiOxNy/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiOxNy layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiOxNy-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.

AB - We fabricate a Pt/Ag:SiOxNy/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiOxNy layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiOxNy-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.

KW - conductive channel

KW - crossbar array

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KW - resistive switching

KW - sneak current

KW - threshold switching

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