Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application

Tae Ho Lee, Dae Yun Kang, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We fabricate a Pt/Ag:SiOxNy/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiOxNy layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiOxNy-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.

Original languageEnglish
Pages (from-to)33768-33772
Number of pages5
JournalACS Applied Materials and Interfaces
Volume10
Issue number40
DOIs
Publication statusPublished - 2018 Oct 10

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Annealing
Metallizing
Resistors
RRAM
X ray photoelectron spectroscopy
Transmission electron microscopy
Data storage equipment
Scanning electron microscopy
Hot Temperature

Keywords

  • conductive channel
  • crossbar array
  • programmable metallization cell
  • resistive switching
  • sneak current
  • threshold switching

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application. / Lee, Tae Ho; Kang, Dae Yun; Kim, Tae Geun.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 40, 10.10.2018, p. 33768-33772.

Research output: Contribution to journalArticle

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