Air stable, ambipolar organic transistors and inverters based upon a heterojunction structure of pentacene on N, N′ -ditridecylperylene-3,4,9, 10-tetracarboxylic di-imide

Min Jun An, Hoon Seok Seo, Ying Zhang, Jeong Do Oh, Jong Ho Choi

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In this paper, we report on the fabrication and electrical characterization of top-contact, ambipolar organic field-effect transistors (OFETs) and inverters based upon a heterostructure of p -type pentacene on n -type N, N′ -ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (P13), using the neutral cluster beam deposition (NCBD) method. The device characteristics measured as a function of both P13 and pentacene layer thicknesses revealed that OFETs with thicknesses of P13 (300 Å) and pentacene (200 Å) showed high air-stability and well-balanced ambipolarity with hole and electron mobilities of 0.12 and 0.08 cm2 /V s. The complementary inverters, comprising two identical ambipolar OFETs, were found to operate both in the first and third quadrants of the transfer curves and exhibited a high voltage inversion gain of 13, good noise margins, and little hysteresis under ambient conditions. The results presented demonstrate that the NCBD-based ambipolar transistors and inverters qualify them as promising potential candidates for the construction of high-performance, organic thin film-based integrated circuits.

Original languageEnglish
Article number023506
JournalApplied Physics Letters
Volume97
Issue number2
DOIs
Publication statusPublished - 2010 Jul 12

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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