Abstract
In this paper, we report on the fabrication and electrical characterization of top-contact, ambipolar organic field-effect transistors (OFETs) and inverters based upon a heterostructure of p -type pentacene on n -type N, N′ -ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (P13), using the neutral cluster beam deposition (NCBD) method. The device characteristics measured as a function of both P13 and pentacene layer thicknesses revealed that OFETs with thicknesses of P13 (300 Å) and pentacene (200 Å) showed high air-stability and well-balanced ambipolarity with hole and electron mobilities of 0.12 and 0.08 cm2 /V s. The complementary inverters, comprising two identical ambipolar OFETs, were found to operate both in the first and third quadrants of the transfer curves and exhibited a high voltage inversion gain of 13, good noise margins, and little hysteresis under ambient conditions. The results presented demonstrate that the NCBD-based ambipolar transistors and inverters qualify them as promising potential candidates for the construction of high-performance, organic thin film-based integrated circuits.
| Original language | English |
|---|---|
| Article number | 023506 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2010 Jul 12 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Air stable, ambipolar organic transistors and inverters based upon a heterojunction structure of pentacene on N, N′ -ditridecylperylene-3,4,9, 10-tetracarboxylic di-imide. / An, Min Jun; Seo, Hoon Seok; Zhang, Ying; Oh, Jeong Do; Choi, Jong-Ho.
In: Applied Physics Letters, Vol. 97, No. 2, 023506, 12.07.2010.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Air stable, ambipolar organic transistors and inverters based upon a heterojunction structure of pentacene on N, N′ -ditridecylperylene-3,4,9, 10-tetracarboxylic di-imide
AU - An, Min Jun
AU - Seo, Hoon Seok
AU - Zhang, Ying
AU - Oh, Jeong Do
AU - Choi, Jong-Ho
PY - 2010/7/12
Y1 - 2010/7/12
N2 - In this paper, we report on the fabrication and electrical characterization of top-contact, ambipolar organic field-effect transistors (OFETs) and inverters based upon a heterostructure of p -type pentacene on n -type N, N′ -ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (P13), using the neutral cluster beam deposition (NCBD) method. The device characteristics measured as a function of both P13 and pentacene layer thicknesses revealed that OFETs with thicknesses of P13 (300 Å) and pentacene (200 Å) showed high air-stability and well-balanced ambipolarity with hole and electron mobilities of 0.12 and 0.08 cm2 /V s. The complementary inverters, comprising two identical ambipolar OFETs, were found to operate both in the first and third quadrants of the transfer curves and exhibited a high voltage inversion gain of 13, good noise margins, and little hysteresis under ambient conditions. The results presented demonstrate that the NCBD-based ambipolar transistors and inverters qualify them as promising potential candidates for the construction of high-performance, organic thin film-based integrated circuits.
AB - In this paper, we report on the fabrication and electrical characterization of top-contact, ambipolar organic field-effect transistors (OFETs) and inverters based upon a heterostructure of p -type pentacene on n -type N, N′ -ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (P13), using the neutral cluster beam deposition (NCBD) method. The device characteristics measured as a function of both P13 and pentacene layer thicknesses revealed that OFETs with thicknesses of P13 (300 Å) and pentacene (200 Å) showed high air-stability and well-balanced ambipolarity with hole and electron mobilities of 0.12 and 0.08 cm2 /V s. The complementary inverters, comprising two identical ambipolar OFETs, were found to operate both in the first and third quadrants of the transfer curves and exhibited a high voltage inversion gain of 13, good noise margins, and little hysteresis under ambient conditions. The results presented demonstrate that the NCBD-based ambipolar transistors and inverters qualify them as promising potential candidates for the construction of high-performance, organic thin film-based integrated circuits.
UR - http://www.scopus.com/inward/record.url?scp=77955165045&partnerID=8YFLogxK
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U2 - 10.1063/1.3460282
DO - 10.1063/1.3460282
M3 - Article
AN - SCOPUS:77955165045
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
M1 - 023506
ER -