Air-stable, hysteresis-free organic complementary inverters produced by the neutral cluster beam deposition method

Min Jun An; Hoon Seok Seo; Ying Zhang; Jeong Do Oh; Jong Ho Choi

doi:10.1021/jp202141h

Air-stable, hysteresis-free organic complementary inverters produced by the neutral cluster beam deposition method

Min Jun An, Hoon Seok Seo, Ying Zhang, Jeong Do Oh, Jong Ho Choi

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We designed and realized ideal organic complementary metal oxide semiconductor (CMOS) inverters through integration of unipolar p-and n-type organic fieldeffect transistors (OFETs) produced by the neutral cluster beam deposition (NCBD) method. The two high-performance, top-contact OFETs with multidigitated, long channel-width geometry were based upon hole-transporting pentacene and electron-transporting N,N'-ditridecylperylene-3,4,9,10- tetracarboxylic diimide (P13) deposited on poly(methyl methacrylate) (PMMA) modified SiO₂ substrates. Due to the well-balanced, high hole and electron mobilities of 0.38 and 0.19 cm²/(V s), low trap densities, and good coupling between p-and n-type OFETs, the hysteresis-free organic CMOS inverters demonstrated sharp inversions and high gains of ∼15 in the first and third quadrants of the voltage transfer curves, and long-term operational stability under ambient conditions.

Original language	English
Pages (from-to)	11763-11767
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	115
Issue number	23
DOIs	https://doi.org/10.1021/jp202141h
Publication status	Published - 2011 Jun 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

Access to Document

10.1021/jp202141h

Cite this

@article{4abe824e49164877a01dda2580866a8e,

title = "Air-stable, hysteresis-free organic complementary inverters produced by the neutral cluster beam deposition method",

abstract = "We designed and realized ideal organic complementary metal oxide semiconductor (CMOS) inverters through integration of unipolar p-and n-type organic fieldeffect transistors (OFETs) produced by the neutral cluster beam deposition (NCBD) method. The two high-performance, top-contact OFETs with multidigitated, long channel-width geometry were based upon hole-transporting pentacene and electron-transporting N,N'-ditridecylperylene-3,4,9,10- tetracarboxylic diimide (P13) deposited on poly(methyl methacrylate) (PMMA) modified SiO2 substrates. Due to the well-balanced, high hole and electron mobilities of 0.38 and 0.19 cm2/(V s), low trap densities, and good coupling between p-and n-type OFETs, the hysteresis-free organic CMOS inverters demonstrated sharp inversions and high gains of ∼15 in the first and third quadrants of the voltage transfer curves, and long-term operational stability under ambient conditions.",

author = "An, {Min Jun} and Seo, {Hoon Seok} and Ying Zhang and Oh, {Jeong Do} and Choi, {Jong Ho}",

year = "2011",

month = jun,

day = "16",

doi = "10.1021/jp202141h",

language = "English",

volume = "115",

pages = "11763--11767",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "23",

}

TY - JOUR

T1 - Air-stable, hysteresis-free organic complementary inverters produced by the neutral cluster beam deposition method

AU - An, Min Jun

AU - Seo, Hoon Seok

AU - Zhang, Ying

AU - Oh, Jeong Do

AU - Choi, Jong Ho

PY - 2011/6/16

Y1 - 2011/6/16

N2 - We designed and realized ideal organic complementary metal oxide semiconductor (CMOS) inverters through integration of unipolar p-and n-type organic fieldeffect transistors (OFETs) produced by the neutral cluster beam deposition (NCBD) method. The two high-performance, top-contact OFETs with multidigitated, long channel-width geometry were based upon hole-transporting pentacene and electron-transporting N,N'-ditridecylperylene-3,4,9,10- tetracarboxylic diimide (P13) deposited on poly(methyl methacrylate) (PMMA) modified SiO2 substrates. Due to the well-balanced, high hole and electron mobilities of 0.38 and 0.19 cm2/(V s), low trap densities, and good coupling between p-and n-type OFETs, the hysteresis-free organic CMOS inverters demonstrated sharp inversions and high gains of ∼15 in the first and third quadrants of the voltage transfer curves, and long-term operational stability under ambient conditions.

AB - We designed and realized ideal organic complementary metal oxide semiconductor (CMOS) inverters through integration of unipolar p-and n-type organic fieldeffect transistors (OFETs) produced by the neutral cluster beam deposition (NCBD) method. The two high-performance, top-contact OFETs with multidigitated, long channel-width geometry were based upon hole-transporting pentacene and electron-transporting N,N'-ditridecylperylene-3,4,9,10- tetracarboxylic diimide (P13) deposited on poly(methyl methacrylate) (PMMA) modified SiO2 substrates. Due to the well-balanced, high hole and electron mobilities of 0.38 and 0.19 cm2/(V s), low trap densities, and good coupling between p-and n-type OFETs, the hysteresis-free organic CMOS inverters demonstrated sharp inversions and high gains of ∼15 in the first and third quadrants of the voltage transfer curves, and long-term operational stability under ambient conditions.

UR - http://www.scopus.com/inward/record.url?scp=80054984650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054984650&partnerID=8YFLogxK

U2 - 10.1021/jp202141h

DO - 10.1021/jp202141h

M3 - Article

AN - SCOPUS:80054984650

SN - 1932-7447

VL - 115

SP - 11763

EP - 11767

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 23

ER -

Air-stable, hysteresis-free organic complementary inverters produced by the neutral cluster beam deposition method

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this