Air-stable, hysteresis-free organic complementary inverters produced by the neutral cluster beam deposition method

Min Jun An, Hoon Seok Seo, Ying Zhang, Jeong Do Oh, Jong Ho Choi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We designed and realized ideal organic complementary metal oxide semiconductor (CMOS) inverters through integration of unipolar p-and n-type organic fieldeffect transistors (OFETs) produced by the neutral cluster beam deposition (NCBD) method. The two high-performance, top-contact OFETs with multidigitated, long channel-width geometry were based upon hole-transporting pentacene and electron-transporting N,N'-ditridecylperylene-3,4,9,10- tetracarboxylic diimide (P13) deposited on poly(methyl methacrylate) (PMMA) modified SiO2 substrates. Due to the well-balanced, high hole and electron mobilities of 0.38 and 0.19 cm2/(V s), low trap densities, and good coupling between p-and n-type OFETs, the hysteresis-free organic CMOS inverters demonstrated sharp inversions and high gains of ∼15 in the first and third quadrants of the voltage transfer curves, and long-term operational stability under ambient conditions.

Original languageEnglish
Pages (from-to)11763-11767
Number of pages5
JournalJournal of Physical Chemistry C
Volume115
Issue number23
DOIs
Publication statusPublished - 2011 Jun 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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