Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

Jun Ho Kim; Yoon Jong Moon; Sun Kyung Kim; Young Zo Yoo; Tae Yeon Seong

doi:10.1016/j.ceramint.2015.08.001

Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

Jun Ho Kim, Yoon Jong Moon, Sun Kyung Kim, Young Zo Yoo, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×10²² to 6.36×10²¹ cm^-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq^-1 and the charge mobility increased from 24.15 to 25.42 cm² V^-1 s^-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10^-3 Ω^-1.

Original language	English
Pages (from-to)	14805-14810
Number of pages	6
Journal	Ceramics International
Volume	41
Issue number	10
DOIs	https://doi.org/10.1016/j.ceramint.2015.08.001
Publication status	Published - 2015 Jul 14

Keywords

Ag
Al-doped ZnO
Multilayer film
Transparent conducting electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2015.08.001

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@article{9577d6a336f1454d963ed2d212087049,

title = "Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit",

abstract = "In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.",

keywords = "Ag, Al-doped ZnO, Multilayer film, Transparent conducting electrode",

author = "{Ho Kim}, Jun and Moon, {Yoon Jong} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Brain Korea 21 program, which is funded by the Ministry of Science, ICT, and Future Planning, Korea, and the Korea Evaluation Institute of Industrial Technology (Grant no. 10049601 : Development of output coupling conductive substrate with light extraction efficiency up to 2.0 times). S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning ( NRF-2013R1A1A1059423 ). Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2015",

month = jul,

day = "14",

doi = "10.1016/j.ceramint.2015.08.001",

language = "English",

volume = "41",

pages = "14805--14810",

journal = "Ceramics International",

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T1 - Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

AU - Ho Kim, Jun

AU - Moon, Yoon Jong

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Brain Korea 21 program, which is funded by the Ministry of Science, ICT, and Future Planning, Korea, and the Korea Evaluation Institute of Industrial Technology (Grant no. 10049601 : Development of output coupling conductive substrate with light extraction efficiency up to 2.0 times). S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning ( NRF-2013R1A1A1059423 ). Publisher Copyright: © 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2015/7/14

Y1 - 2015/7/14

N2 - In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.

AB - In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.

KW - Ag

KW - Al-doped ZnO

KW - Multilayer film

KW - Transparent conducting electrode

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DO - 10.1016/j.ceramint.2015.08.001

M3 - Article

AN - SCOPUS:84955401605

SN - 0272-8842

VL - 41

SP - 14805

EP - 14810

JO - Ceramics International

JF - Ceramics International

IS - 10

ER -

Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

Abstract

Keywords

ASJC Scopus subject areas

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