Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

Jun Ho Kim, Yoon Jong Moon, Sun Kyung Kim, Young Zo Yoo, Tae Yeon Seong

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.

Original languageEnglish
Pages (from-to)14805-14810
Number of pages6
JournalCeramics International
Volume41
DOIs
Publication statusPublished - 2015 Jul 14

Fingerprint

Multilayer films
Sheet resistance
Carrier concentration
Multilayers
Electric properties
Optical properties
Surface roughness
Glass
Substrates
Temperature

Keywords

  • Ag
  • Al-doped ZnO
  • Multilayer film
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Ceramics and Composites
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit. / Ho Kim, Jun; Moon, Yoon Jong; Kim, Sun Kyung; Yoo, Young Zo; Seong, Tae Yeon.

In: Ceramics International, Vol. 41, 14.07.2015, p. 14805-14810.

Research output: Contribution to journalArticle

Ho Kim, Jun ; Moon, Yoon Jong ; Kim, Sun Kyung ; Yoo, Young Zo ; Seong, Tae Yeon. / Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit. In: Ceramics International. 2015 ; Vol. 41. pp. 14805-14810.
@article{9577d6a336f1454d963ed2d212087049,
title = "Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit",
abstract = "In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93{\%} at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.",
keywords = "Ag, Al-doped ZnO, Multilayer film, Transparent conducting electrode",
author = "{Ho Kim}, Jun and Moon, {Yoon Jong} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Seong, {Tae Yeon}",
year = "2015",
month = "7",
day = "14",
doi = "10.1016/j.ceramint.2015.08.001",
language = "English",
volume = "41",
pages = "14805--14810",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

AU - Ho Kim, Jun

AU - Moon, Yoon Jong

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Seong, Tae Yeon

PY - 2015/7/14

Y1 - 2015/7/14

N2 - In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.

AB - In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.

KW - Ag

KW - Al-doped ZnO

KW - Multilayer film

KW - Transparent conducting electrode

UR - http://www.scopus.com/inward/record.url?scp=84955401605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955401605&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2015.08.001

DO - 10.1016/j.ceramint.2015.08.001

M3 - Article

VL - 41

SP - 14805

EP - 14810

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

ER -