AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

T. G. Kim; X. L. Wang; K. Komori; K. Hikosaka; M. Ogura

doi:10.1049/el:19990458

AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

T. G. Kim, X. L. Wang, K. Komori, K. Hikosaka, M. Ogura

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

AlGaAs/GaAs quantum wire lasers, with three quantum wires (QWRs) of almost identical physical size, have been fabricated by flow rate modulation epitaxy. Room temperature lasing from the ground state electron and heavy-hole (1e-1hh) transition of the QWRs has been observed for the first time. Typical threshold currents of 6 mA and extremely minor wavelength shifts in emission spectra have been obtained.

Original language	English
Pages (from-to)	639-640
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	8
DOIs	https://doi.org/10.1049/el:19990458
Publication status	Published - 1999 Apr 15
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19990458

Cite this

@article{28f453ee3858470f8367f901fdf8c9f0,

title = "AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy",

abstract = "AlGaAs/GaAs quantum wire lasers, with three quantum wires (QWRs) of almost identical physical size, have been fabricated by flow rate modulation epitaxy. Room temperature lasing from the ground state electron and heavy-hole (1e-1hh) transition of the QWRs has been observed for the first time. Typical threshold currents of 6 mA and extremely minor wavelength shifts in emission spectra have been obtained.",

author = "Kim, {T. G.} and Wang, {X. L.} and K. Komori and K. Hikosaka and M. Ogura",

year = "1999",

month = apr,

day = "15",

doi = "10.1049/el:19990458",

language = "English",

volume = "35",

pages = "639--640",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "8",

}

TY - JOUR

T1 - AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

AU - Kim, T. G.

AU - Wang, X. L.

AU - Komori, K.

AU - Hikosaka, K.

AU - Ogura, M.

PY - 1999/4/15

Y1 - 1999/4/15

N2 - AlGaAs/GaAs quantum wire lasers, with three quantum wires (QWRs) of almost identical physical size, have been fabricated by flow rate modulation epitaxy. Room temperature lasing from the ground state electron and heavy-hole (1e-1hh) transition of the QWRs has been observed for the first time. Typical threshold currents of 6 mA and extremely minor wavelength shifts in emission spectra have been obtained.

AB - AlGaAs/GaAs quantum wire lasers, with three quantum wires (QWRs) of almost identical physical size, have been fabricated by flow rate modulation epitaxy. Room temperature lasing from the ground state electron and heavy-hole (1e-1hh) transition of the QWRs has been observed for the first time. Typical threshold currents of 6 mA and extremely minor wavelength shifts in emission spectra have been obtained.

UR - http://www.scopus.com/inward/record.url?scp=0032680002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032680002&partnerID=8YFLogxK

U2 - 10.1049/el:19990458

DO - 10.1049/el:19990458

M3 - Article

AN - SCOPUS:0032680002

SN - 0013-5194

VL - 35

SP - 639

EP - 640

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this