AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

T. G. Kim, X. L. Wang, K. Komori, K. Hikosaka, M. Ogura

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

AlGaAs/GaAs quantum wire lasers, with three quantum wires (QWRs) of almost identical physical size, have been fabricated by flow rate modulation epitaxy. Room temperature lasing from the ground state electron and heavy-hole (1e-1hh) transition of the QWRs has been observed for the first time. Typical threshold currents of 6 mA and extremely minor wavelength shifts in emission spectra have been obtained.

Original languageEnglish
Pages (from-to)639-640
Number of pages2
JournalElectronics Letters
Volume35
Issue number8
DOIs
Publication statusPublished - 1999 Apr 15
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy'. Together they form a unique fingerprint.

  • Cite this