AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

Dong Ju Chae, Dong Yoon Kim, Tae Geun Kim, Yun Mo Sung, Moon Doeck Kim

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was found to increase the work function as well as the energy bandgap of the ITO and, thereby, reduce the Shottky barrier height in contact with p-(Al)GaN. As a result, the optical transmittance increased from 79.7 to 86.9 at 380 nm, while the specific contact resistance decreased from 1.04 10 -3 cm 2 to 9.12 10 -4 cm 2 after F-doping, which led to an increase in the output power from 2.41 mW to 5.99 mW.

Original languageEnglish
Article number081110
JournalApplied Physics Letters
Volume100
Issue number8
DOIs
Publication statusPublished - 2012 Feb 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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