AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

Dong Ju Chae, Dong Yoon Kim, Tae Geun Kim, Yun Mo Sung, Moon Doeck Kim

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was found to increase the work function as well as the energy bandgap of the ITO and, thereby, reduce the Shottky barrier height in contact with p-(Al)GaN. As a result, the optical transmittance increased from 79.7 to 86.9 at 380 nm, while the specific contact resistance decreased from 1.04 10 -3 cm 2 to 9.12 10 -4 cm 2 after F-doping, which led to an increase in the output power from 2.41 mW to 5.99 mW.

Original languageEnglish
Article number081110
JournalApplied Physics Letters
Volume100
Issue number8
DOIs
Publication statusPublished - 2012 Feb 20

Fingerprint

gallium nitrides
aluminum nitrides
ultraviolet radiation
indium oxides
tin oxides
fluorine
light emitting diodes
electrodes
contact resistance
ITO (semiconductors)
transmittance
electrical properties
optical properties
output
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes. / Ju Chae, Dong; Yoon Kim, Dong; Kim, Tae Geun; Sung, Yun Mo; Doeck Kim, Moon.

In: Applied Physics Letters, Vol. 100, No. 8, 081110, 20.02.2012.

Research output: Contribution to journalArticle

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