An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.
|Number of pages||3|
|Publication status||Published - 2004 Feb|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry