AlGaN/GaN HEMT based liquid sensors

R. Mehandru, B. Luo, B. S. Kang, Ji Hyun Kim, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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Abstract

An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.

Original languageEnglish
Pages (from-to)351-353
Number of pages3
JournalSolid-State Electronics
Volume48
Issue number2
DOIs
Publication statusPublished - 2004 Feb 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Mehandru, R., Luo, B., Kang, B. S., Kim, J. H., Ren, F., Pearton, S. J., Pan, C. C., Chen, G. T., & Chyi, J. I. (2004). AlGaN/GaN HEMT based liquid sensors. Solid-State Electronics, 48(2), 351-353. https://doi.org/10.1016/S0038-1101(03)00318-6