AlGaN/GaN HEMT based liquid sensors

R. Mehandru, B. Luo, B. S. Kang, Ji Hyun Kim, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.

Original languageEnglish
Pages (from-to)351-353
Number of pages3
JournalSolid-State Electronics
Volume48
Issue number2
DOIs
Publication statusPublished - 2004 Feb 1
Externally publishedYes

Fingerprint

High electron mobility transistors
Surface charge
Acetone
high electron mobility transistors
Nitrides
Heterojunctions
Transistors
Gases
Acids
Fluids
Water
Monitoring
sensors
Sensors
Liquids
liquids
acetone
nitrides
depletion
transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Mehandru, R., Luo, B., Kang, B. S., Kim, J. H., Ren, F., Pearton, S. J., ... Chyi, J. I. (2004). AlGaN/GaN HEMT based liquid sensors. Solid-State Electronics, 48(2), 351-353. https://doi.org/10.1016/S0038-1101(03)00318-6

AlGaN/GaN HEMT based liquid sensors. / Mehandru, R.; Luo, B.; Kang, B. S.; Kim, Ji Hyun; Ren, F.; Pearton, S. J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.

In: Solid-State Electronics, Vol. 48, No. 2, 01.02.2004, p. 351-353.

Research output: Contribution to journalArticle

Mehandru, R, Luo, B, Kang, BS, Kim, JH, Ren, F, Pearton, SJ, Pan, CC, Chen, GT & Chyi, JI 2004, 'AlGaN/GaN HEMT based liquid sensors', Solid-State Electronics, vol. 48, no. 2, pp. 351-353. https://doi.org/10.1016/S0038-1101(03)00318-6
Mehandru R, Luo B, Kang BS, Kim JH, Ren F, Pearton SJ et al. AlGaN/GaN HEMT based liquid sensors. Solid-State Electronics. 2004 Feb 1;48(2):351-353. https://doi.org/10.1016/S0038-1101(03)00318-6
Mehandru, R. ; Luo, B. ; Kang, B. S. ; Kim, Ji Hyun ; Ren, F. ; Pearton, S. J. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. / AlGaN/GaN HEMT based liquid sensors. In: Solid-State Electronics. 2004 ; Vol. 48, No. 2. pp. 351-353.
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