AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield

T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, S. J. Pearton, Ji Hyun Kim, J. Lin, P. Bove, H. Lahreche, J. Thuret, R. Langer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly-SiC (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gatedrain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ~40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm-1.

Original languageEnglish
Title of host publication2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Pages137-140
Number of pages4
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 - Austin, TX, United States
Duration: 2007 May 142007 May 17

Other

Other22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
CountryUnited States
CityAustin, TX
Period07/5/1407/5/17

Fingerprint

High electron mobility transistors
Diodes
Silicon
Parameter extraction
Transconductance
Substrates
Molecular beam epitaxy
Costs
Electric potential

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Anderson, T. J., Ren, F., Voss, L., Hlad, M., Gila, B. P., Pearton, S. J., ... Langer, R. (2007). AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield. In 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 (pp. 137-140)

AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield. / Anderson, T. J.; Ren, F.; Voss, L.; Hlad, M.; Gila, B. P.; Pearton, S. J.; Kim, Ji Hyun; Lin, J.; Bove, P.; Lahreche, H.; Thuret, J.; Langer, R.

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. p. 137-140.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Anderson, TJ, Ren, F, Voss, L, Hlad, M, Gila, BP, Pearton, SJ, Kim, JH, Lin, J, Bove, P, Lahreche, H, Thuret, J & Langer, R 2007, AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield. in 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. pp. 137-140, 22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, Austin, TX, United States, 07/5/14.
Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Pearton SJ et al. AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield. In 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. p. 137-140
Anderson, T. J. ; Ren, F. ; Voss, L. ; Hlad, M. ; Gila, B. P. ; Pearton, S. J. ; Kim, Ji Hyun ; Lin, J. ; Bove, P. ; Lahreche, H. ; Thuret, J. ; Langer, R. / AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield. 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. pp. 137-140
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abstract = "The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly-SiC (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gatedrain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ~40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm-1.",
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AU - Anderson, T. J.

AU - Ren, F.

AU - Voss, L.

AU - Hlad, M.

AU - Gila, B. P.

AU - Pearton, S. J.

AU - Kim, Ji Hyun

AU - Lin, J.

AU - Bove, P.

AU - Lahreche, H.

AU - Thuret, J.

AU - Langer, R.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly-SiC (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gatedrain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ~40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm-1.

AB - The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly-SiC (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gatedrain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ~40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm-1.

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