AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2008|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry