AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Hong Yeol Kim, Ji Hyun Kim, Sang Pil Yun, Kye Ryung Kim, Travis J. Anderson, Fan Ren, S. J. Pearton

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number7
DOIs
Publication statusPublished - 2008 Jun 2

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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