AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, Ji Hyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo

Research output: Contribution to journalArticle

114 Citations (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMT) were discussed. Sc2O3 was used as the gate oxide and surface passivation. Results showed that Sc2O3 which is deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate dielectric and as a surface passivation layer and is free of residual hydrogen.

Original languageEnglish
Pages (from-to)2530-2532
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number15
DOIs
Publication statusPublished - 2003 Apr 14
Externally publishedYes

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high electron mobility transistors
metal oxide semiconductors
passivity
oxides
molecular beam epitaxy
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation. / Mehandru, R.; Luo, B.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

In: Applied Physics Letters, Vol. 82, No. 15, 14.04.2003, p. 2530-2532.

Research output: Contribution to journalArticle

Mehandru, R, Luo, B, Kim, JH, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Gotthold, D, Birkhahn, R, Peres, B, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D & Crespo, A 2003, 'AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation', Applied Physics Letters, vol. 82, no. 15, pp. 2530-2532. https://doi.org/10.1063/1.1567051
Mehandru, R. ; Luo, B. ; Kim, Ji Hyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Gotthold, D. ; Birkhahn, R. ; Peres, B. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. / AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation. In: Applied Physics Letters. 2003 ; Vol. 82, No. 15. pp. 2530-2532.
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