AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo

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118 Citations (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMT) were discussed. Sc2O3 was used as the gate oxide and surface passivation. Results showed that Sc2O3 which is deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate dielectric and as a surface passivation layer and is free of residual hydrogen.

Original languageEnglish
Pages (from-to)2530-2532
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number15
DOIs
Publication statusPublished - 2003 Apr 14
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2003). AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation. Applied Physics Letters, 82(15), 2530-2532. https://doi.org/10.1063/1.1567051