Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice

Kwang Moo Kim, Young Ju Park, Young Min Park, Chan Kyeong Hyon, Eun Kyu Kim, Jung ho Park

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We fabricated InAs self-assembled quantum dots on a strained layer using molecular beam epitaxy. The controllable strained layer consisted of an InAs/GaAs superlattice and a GaAs spacer layer on a GaAs (001) substrate. We formed two-dimensional arrays of quantum dots along the 〈110〉 directions on the partially strain-relaxed layer that is formed using the superlattice system. The increase in the thickness of the partially strain-relaxed layer resulted in stronger alignment of the quantum dots. The aligned quantum dots are applicable to quantum devices, because they confine carriers well, in spite of the existence of dislocation networks. Strongly aligned quantum dots have a lower carrier transition energy because of their larger size and increased relaxation.

Original languageEnglish
Pages (from-to)5453-5456
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number9
DOIs
Publication statusPublished - 2002 Nov 1

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alignment
quantum dots
spacers
molecular beam epitaxy
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice. / Kim, Kwang Moo; Park, Young Ju; Park, Young Min; Hyon, Chan Kyeong; Kim, Eun Kyu; Park, Jung ho.

In: Journal of Applied Physics, Vol. 92, No. 9, 01.11.2002, p. 5453-5456.

Research output: Contribution to journalArticle

Kim, Kwang Moo ; Park, Young Ju ; Park, Young Min ; Hyon, Chan Kyeong ; Kim, Eun Kyu ; Park, Jung ho. / Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 9. pp. 5453-5456.
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