Abstract
All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 mΩ is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 mΩ at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system.
Original language | English |
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Pages (from-to) | 77-80 |
Number of pages | 4 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 403 |
DOIs | |
Publication status | Published - 2016 Apr 1 |
Keywords
- Interface resistance
- Perpendicular spin
- Schottky tunnel barrier
- Spin transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics