All-electric spin transistor using perpendicular spins

Ji Hoon Kim, Joohyung Bae, Byoung Chul Min, Hyung Jun Kim, Joonyeon Chang, Hyun Cheol Koo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 mΩ is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 mΩ at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume403
DOIs
Publication statusPublished - 2016 Apr 1

Keywords

  • Interface resistance
  • Perpendicular spin
  • Schottky tunnel barrier
  • Spin transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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    Kim, J. H., Bae, J., Min, B. C., Kim, H. J., Chang, J., & Koo, H. C. (2016). All-electric spin transistor using perpendicular spins. Journal of Magnetism and Magnetic Materials, 403, 77-80. https://doi.org/10.1016/j.jmmm.2015.11.056