Abstract
All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 mΩ is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 mΩ at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system.
| Original language | English |
|---|---|
| Pages (from-to) | 77-80 |
| Number of pages | 4 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 403 |
| DOIs | |
| Publication status | Published - 2016 Apr 1 |
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Keywords
- Interface resistance
- Perpendicular spin
- Schottky tunnel barrier
- Spin transistor
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
All-electric spin transistor using perpendicular spins. / Kim, Ji Hoon; Bae, Joohyung; Min, Byoung Chul; Kim, Hyung Jun; Chang, Joonyeon; Koo, Hyun Cheol.
In: Journal of Magnetism and Magnetic Materials, Vol. 403, 01.04.2016, p. 77-80.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - All-electric spin transistor using perpendicular spins
AU - Kim, Ji Hoon
AU - Bae, Joohyung
AU - Min, Byoung Chul
AU - Kim, Hyung Jun
AU - Chang, Joonyeon
AU - Koo, Hyun Cheol
PY - 2016/4/1
Y1 - 2016/4/1
N2 - All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 mΩ is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 mΩ at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system.
AB - All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 mΩ is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 mΩ at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system.
KW - Interface resistance
KW - Perpendicular spin
KW - Schottky tunnel barrier
KW - Spin transistor
UR - http://www.scopus.com/inward/record.url?scp=84949554236&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949554236&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2015.11.056
DO - 10.1016/j.jmmm.2015.11.056
M3 - Article
AN - SCOPUS:84949554236
VL - 403
SP - 77
EP - 80
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
ER -