All-polymer based flexible field effect transistor using poly(3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole (PPy)

H. S. Kang, H. S. Kang, J. K. Lee, J. Joo, M. S. Lee, M. S. Kim, J. Y. Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spincoater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I ds) as a function of gate bias (Vg). We suggest that ionic motion in the active layer plays an important role for electrical properties.

Original languageEnglish
Pages (from-to)633-636
Number of pages4
JournalJournal of Nonlinear Optical Physics and Materials
Volume13
Issue number3-4
DOIs
Publication statusPublished - 2004 Dec

Keywords

  • Flexible field effect transistor
  • Poly(3,4-ethylenedioxythiophene) (PEDOT)
  • Polypyrrole (PPy)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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